Bismuth trioxide-bismuth tungstate heterojunction photocatalyst and preparation method thereof

A technology of bismuth trioxide and photocatalyst, applied in the direction of catalyst activation/preparation, physical/chemical process catalyst, chemical instrument and method, etc., to achieve high photocatalytic efficiency, high utilization rate, good photocatalytic activity and stability Effect

Inactive Publication Date: 2017-12-19
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The invention provides a bismuth trioxide-bismuth tungstate heterojunction photocatalyst and a preparation method thereof, which solve the problem of Bi 2 o 3 / Bi 2 WO 6 During the synthesis of heterojunction catalysts, it is necessary to prepare two kinds of composite material precursors in advance, which is a technical difficulty

Method used

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  • Bismuth trioxide-bismuth tungstate heterojunction photocatalyst and preparation method thereof
  • Bismuth trioxide-bismuth tungstate heterojunction photocatalyst and preparation method thereof
  • Bismuth trioxide-bismuth tungstate heterojunction photocatalyst and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0035] The first step: take 0.00025mol (0.7391g) (NH 4 ) 10 W12 o 41 ·5H 2 O was dissolved in 18ml of ethylene glycol under the condition of magnetic stirring, which was recorded as A solution.

[0036] The second part: take 0.0066mol (3.2015g) Bi (NO 3 ) 3 ·5H 2 O was dissolved in 18ml of ethylene glycol with the assistance of ultrasound, which was recorded as solution B.

[0037] The third part: Under the condition of magnetic stirring, slowly add solution A to solution B, then add 36ml of ethanol, continue to stir for 10 minutes until the mixture is uniform, and record it as solution C.

[0038] Step 4: Move the C solution into a hydrothermal reaction kettle, and place it in a blast drying oven at a constant temperature of 170°C for 6 hours

[0039] Step 5: Take out the reactant, wash it several times with absolute ethanol, and dry it at 60°C for 6 hours

[0040] Step 6: Place the dried product in a muffle furnace at 400°C to calcinate it into powder, take it out af...

Embodiment 2

[0047] The first step: take 0.00025mol (0.7391g) (NH 4 ) 10 W 12 o 41 ·5H 2 O was dissolved in 18ml of ethylene glycol under the condition of magnetic stirring, which was recorded as A solution.

[0048] The second part: Take 0.0072mol (3.4925g) Bi(NO 3 ) 3 ·5H 2 O was dissolved in 18ml of ethylene glycol with the assistance of ultrasound, which was recorded as solution B.

[0049] The third part: Under the condition of magnetic stirring, slowly add solution A to solution B, then add 36ml of ethanol, continue to stir for 10 minutes until the mixture is uniform, and record it as solution C.

[0050] Step 4: Move the C solution into a hydrothermal reaction kettle, and place it in a blast drying oven at a constant temperature of 170°C for 6 hours

[0051] Step 5: Take out the reactant, wash it several times with absolute ethanol, and dry it at 60°C for 6 hours

[0052] Step 6: Place the dried product in a muffle furnace at 400°C to calcinate it into powder, take it out a...

Embodiment 3

[0059] The first step: take 0.00025mol (0.7391g) (NH 4 ) 10 W 12 o 41 ·5H 2 O was dissolved in 18ml of ethylene glycol under the condition of magnetic stirring, which was recorded as A solution.

[0060] The second part: Take 0.0078mol (3.7835g) Bi(NO 3 ) 3 ·5H 2 O was dissolved in 18ml of ethylene glycol with the assistance of ultrasound, which was recorded as solution B.

[0061]The third part: Under the condition of magnetic stirring, slowly add solution A to solution B, then add 36ml of ethanol, continue to stir for 10 minutes until the mixture is uniform, and record it as solution C.

[0062] Step 4: Move the C solution into a hydrothermal reaction kettle, and place it in a blast drying oven at a constant temperature of 170°C for 6 hours

[0063] Step 5: Take out the reactant, wash it several times with absolute ethanol, and dry it at 60°C for 6 hours

[0064] Step 6: Place the dried product in a muffle furnace at 400°C to calcinate it into powder, take it out af...

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Abstract

The invention belongs to the field of semiconductor catalysis, and discloses a preparation method of a bismuth trioxide-bismuth tungstate heterojunction photocatalyst. The method comprises the steps of compounding bismuth trioxide and bismuth tungstate with the molar ratio being 0.1:1 to 0.5:1, so as to form a heterojunction structure, and ensuring that bismuth trioxide is loaded on the surface of bismuth tungstate. According to the method, bismuth nitrate and ammonium metatungsten are taken as raw materails, and the bismuth trioxide-bismuth tungstate heterojunction photocatalyst is formed by one step through a solvothermal method. The preparation method is simple, the synthesis period is short, and a formed sample is high in purity and has a typical p-n heterojunction structure, can effectively restrain the compounding of photo-induced electron and holes, promotes the separation of photon-generated carriers, has the characteristics of high activity and wide spectral response, and is of great importance.

Description

technical field [0001] The invention belongs to the field of semiconductor photocatalysis, and specifically relates to a heterojunction photocatalyst and a preparation method thereof. Background technique [0002] With the development of industrial economy, the discharge of organic pollutants in water is increasing, especially the deterioration of water quality caused by refractory wastewater, which cannot be effectively treated by traditional treatment technologies, among which photocatalytic technology has a clean , no secondary pollution, can use solar energy and other advantages by the majority of researchers' attention. However, traditional TiO 2 Semiconductor materials can only use ultraviolet light in sunlight due to their wide band gap (3.2eV). Therefore, the study of photocatalytic materials with visible light response is the main research direction of photocatalysis. [0003] Bismuth tungstate (Bi 2 WO 6 ) As a kind of p-type semiconductor material, it has a p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/31B01J35/02B01J37/10C02F1/30C02F101/30
CPCB01J23/31B01J35/004B01J35/02B01J37/10C02F1/30C02F2101/308
Inventor 王永强陈曦刘敏敏姜珊赵朝成刘芳
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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