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40results about How to "Increase the chance of occurrence" patented technology

Molecular detection method for rapidly distinguishing mating types of Chinese caterpillar fungus

The invention relates to a molecular detection method for rapidly distinguishing MAT1-1 and MAT1-2 mating types of Chinese caterpillar fungus, comprising two pairs of specific primers (Cm1-F / Cm1-R andCm2-F / Cm2-R) for detecting mating types and two sets of corresponding PCR amplification systems and PCR amplification programs. The primer pair Cm1-F / Cm1-R is used for detecting the MAT1-1 mating type of Chinese caterpillar fungus, and the other primer pair Cm2-F / Cm2-R is used for detecting the MAT1-2 mating type of Chinese caterpillar fungus; and using both pairs of the specific primers and thecorresponding PCR amplification systems and the PCR amplification programs can realize the rapid detection of the mating types of Chinese caterpillar fungus. The detection results of the molecular detection method have high specificity, and the molecular detection method is stable, reliable and rapid and can greatly shorten the time of biological detection. The molecular detection method is suitable for the detection of the mating types of Chinese caterpillar fungus in the relevant professional fields such as production of edible fungi and medicinal fungi, strain breeding, plant protection andthe like as well as the research in the aspects of mating type gene, phylogenetic development and the like, and has significance in researching sexual reproduction of other fungi of cordyceps and directing the production practice.
Owner:CHINA AGRI UNIV

Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell

The invention discloses a method for preparing a thin-film solar photovoltaic cell with a copper indium gallium selenide (CIGS) nano wire array structure. The method comprises the following steps of: growing a large-area cuprous sulfide or copper sulfide nano wire array by adopting a gas-solid reaction method, and converting the cuprous sulfide or copper sulfide nano wire array into a CIGS nano wire array by physical vapor deposition and heat treatment methods. The component, the phase structure and the energy band structure of the semiconductor nano wire array can be regulated by controlling the categories of deposition elements, the deposition sequence, the deposition process, post treatment and the like, so that solar photovoltaic cells with different structures and properties are prepared. Through the cell, light reflection is reduced, light absorption is increased, the probability of producing current carriers can be increased, the probability of recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is greatly improved. The method is low in cost, the preparation processes are controllable, the prepared nano wire array is uniform in structure distribution, and preparation of the nano structural thin-film solar photovoltaic cell with large area and high photoelectric conversion efficiency can be realized.
Owner:SUN YAT SEN UNIV

Two-sided welding method for U-shaped ribbed slab unit welding seam

InactiveCN106563868AReduced stress amplitudeAvoid Fatigue Cracking ProblemsArc welding apparatusSubmerged arc weldingEngineering
The invention provides a two-sided welding method for a U-shaped ribbed slab unit welding seam. The two-sided welding method comprises the following steps: cleaning the welding surface of a piece to be welded; placing a U-shaped rib on the surface of the piece to be welded, wherein an assembly groove is formed between the end part of a U-shaped ribbed web plate and the surface of the piece to be welded, and the groove angle is 50-60 degrees; carrying out positioning welding on the U-shaped rib and the piece to be welded in the horizontal position to obtain a U-shaped ribbed slab unit; welding a fillet welding seam at the jointing position of the inner side of the U-shaped ribbed web plate and the piece to be welded; and placing the U-shaped ribbed slab unit welded with the fillet welding seam on an anti-deformation slanting tension bed to carry out welding of an outer side welding seam, wherein a process of twin-wire submerged arc welding with single power supply is adopted. According to the two-sided welding method, a jointing welding seam between the U-shaped rib and the piece to be welded is changed into a two-sided fillet welding seam form from a single-sided fillet welding seam form in the prior art, so that stress amplitudes at a weld root and a weld toe are greatly lowered, the problem of initiation of fatigue cracks of the welding seam at the weld root is solved, and the fatigue performance at the weld toe is also improved.
Owner:WUCHUAN HEAVY ENG

Micro/nanometer secondary surface array and preparation method and application thereof

The invention discloses a 'cactus' micro / nanometer secondary surface array structure, a preparation method and application of the 'cactus' micro / nanometer secondary surface array structure. The micro / nanometer secondary surface array is formed in the manner that nanoscale copper 2 sulphur (Cu2S) nanometer lines grow on the surface of micron scale Cu2S spherical crowns, and the Cu2S spherical crowns are periodically distributed on the surface of a substrate. Compared with a common plane nanometer line array, the Cu2S'cactus' micro / nanometer secondary surface array further increases specific surface area, and increases probability of generation of charge carriers. Meanwhile, when the angle of incident light changes, change of relative position between the nanometer lines and light rays is small, and change of light absorption is small, so the light absorption can maintain good performance within the wide light incident angle. When the Cu2S'cactus' micro / nanometer secondary surface array is applied to the field of solar energy, the Cu2S'cactus' micro / nanometer secondary surface array can overcome the defects of degrading the performance along with the position of the sun, or changing angles of devices continuously along with the change of illumination angles to cause complexity of structure of the devices and increase of cost.
Owner:SUN YAT SEN UNIV

Method for controlling orientation of electrodeformation of ferroelectric single crystal

The invention provides a method for controlling orientation of electrodeformation of a ferroelectric single crystal. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal comprises the following steps: bevelling (001) surface of a trigonal ferroelectric single crystal, so as to obtain bevelled single crystal; and initially polarizing the bevelled single crystal in the presence of an external electric field, and then polarizing in the presence of an external reverse electric field, so as to obtain reversely polarized single crystal. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal has the advantages that the (001) surface of the trigonal ferroelectric single crystal is treated by adopting a bevelling way, so that the surface of the single crystal is not strict (001) in orientation, and ratio of polarization overturn at 109 degrees can be increased when an electric field is turned over up and down. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal has the advantages that a simple bevelling technology is carried out on a (001)-oriented trigonal ferroelectric single crystal, so that surface normal and a crystal axis are not coincided, symmetry about the surface normal in spontaneous polarization direction is destroyed, and occurrence probability of 109-degree polarization overturn is improved, so that control on the orientation of the electrodeformation is realized. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal has the advantages that warming-assisted polarization is preferred, a single 109-degree domain rotation path can be realized, and an application of ferromagnetic thin film/piezoelectric single crystal heterojunction equal strain regulation is facilitated.
Owner:UNIV OF SCI & TECH OF CHINA

Ultra-thick coating hot galvanized steel strip for underground pipe gallery corrugated pipe and production method thereof

The invention discloses an ultra-thick coating hot galvanized steel strip for an underground pipe gallery corrugated pipe and a production method thereof. The hot galvanized steel strip comprises thefollowing chemical components of, in percentage by mass, 0.045%-0.065% of C, 0.15%-0.25% of Mn, less than or equal to 0.020% of S, less than or equal to 0.020% of P, less than or equal to 0.03% of Si,greater than or equal to 0.020% of Als, and balance iron and inevitable impurities; the production method comprises converter smelting, LF refining, continuous casting , hot rolling, cold rolling andgalvanizing processes. According to the ultra-thick coating hot galvanized steel strip for the underground pipe gallery corrugated pipe and the production method thereof, proper mechanical propertiesof the steel strip are guaranteed through reasonable component design and hot rolling and galvanizing annealing process design; and through reducing the height of an air knife, increasing the distance between a knife lip and the strip steel and sectional control measures of the opening degree of the air knife lip, the generation of zinc rhyolite and edge thickness defects is inhibited, the requirement of the underground pipe gallery industry on the ultra-thick coating hot galvanized steel strip is met, and remarkable economic benefits are achieved.
Owner:TANGSHAN IRON & STEEL GROUP +1

Molecular detection method for rapidly distinguishing mating types of Chinese caterpillar fungus

The invention relates to a molecular detection method for rapidly distinguishing MAT1-1 and MAT1-2 mating types of Chinese caterpillar fungus, comprising two pairs of specific primers (Cm1-F / Cm1-R and Cm2-F / Cm2-R) for detecting mating types and two sets of corresponding PCR amplification systems and PCR amplification programs. The primer pair Cm1-F / Cm1-R is used for detecting the MAT1-1 mating type of Chinese caterpillar fungus, and the other primer pair Cm2-F / Cm2-R is used for detecting the MAT1-2 mating type of Chinese caterpillar fungus; and using both pairs of the specific primers and thecorresponding PCR amplification systems and the PCR amplification programs can realize the rapid detection of the mating types of Chinese caterpillar fungus. The detection results of the molecular detection method have high specificity, and the molecular detection method is stable, reliable and rapid and can greatly shorten the time of biological detection. The molecular detection method is suitable for the detection of the mating types of Chinese caterpillar fungus in the relevant professional fields such as production of edible fungi and medicinal fungi, strain breeding, plant protection and the like as well as the research in the aspects of mating type gene, phylogenetic development and the like, and has significance in researching sexual reproduction of other fungi of cordyceps and directing the production practice.
Owner:CHINA AGRI UNIV

Method for separating enriched palladium by adopting supermolecule secondary spherical coordination identification

The invention relates to a method for separating enriched palladium by adopting supermolecule secondary spherical coordination identification. The method adopts the technical scheme as follows: taking a certain amount of sample solution containing palladium, adding an alcoholic solution of protonized dibenzyl amine to the sample solution containing palladium, adding acid to the mixture, standing the new mixture for 5 hours to 24 hours, filtering the new mixture to obtain solid complexes, drying the obtained solid complexes, dissolving the obtained solid complexes with ammonia, extracting the obtained solid complexes with inert organic solvent to separate organic phases; and taking a water phase as a solution for extracting the palladium, wherein the alcoholic solution can be ethanol, tert-butyl alcohol, n-propanol, isopropyl alcohol, carbinol, n-butyl alcohol, isobutyl alcohol or glycol, the acid can be hydrochloric acid, sulphuric acid, nitric acid, acetic acid, p-toluene sulfonic acid, benzene sulfonic acid and trifluoroacetic acid or the mixture of some of the same, and the inert organic solvent can be nitrobenzene, bromobenzene, chlorobenzene, petroleum ether, chloroform, paraffinic oil, coal oil, methylene dichloride, benzene, toluene or dimethylbenzene or the mixture of some of the same. With the method, the palladium can be rapidly separated from other base metals with high efficiency and high selectivity.
Owner:LIAONING UNIVERSITY

Micro/nanometer secondary surface array and preparation method and application thereof

The invention discloses a 'cactus' micro / nanometer secondary surface array structure, a preparation method and application of the 'cactus' micro / nanometer secondary surface array structure. The micro / nanometer secondary surface array is formed in the manner that nanoscale copper 2 sulphur (Cu2S) nanometer lines grow on the surface of micron scale Cu2S spherical crowns, and the Cu2S spherical crowns are periodically distributed on the surface of a substrate. Compared with a common plane nanometer line array, the Cu2S'cactus' micro / nanometer secondary surface array further increases specific surface area, and increases probability of generation of charge carriers. Meanwhile, when the angle of incident light changes, change of relative position between the nanometer lines and light rays is small, and change of light absorption is small, so the light absorption can maintain good performance within the wide light incident angle. When the Cu2S'cactus' micro / nanometer secondary surface array is applied to the field of solar energy, the Cu2S'cactus' micro / nanometer secondary surface array can overcome the defects of degrading the performance along with the position of the sun, or changing angles of devices continuously along with the change of illumination angles to cause complexity of structure of the devices and increase of cost.
Owner:SUN YAT SEN UNIV

Thin film solar photovoltaic cell with nanowire array structure and preparation method thereof

The invention discloses a method for preparing a thin-film solar photovoltaic cell with a copper indium gallium selenide (CIGS) nano wire array structure. The method comprises the following steps of: growing a large-area cuprous sulfide or copper sulfide nano wire array by adopting a gas-solid reaction method, and converting the cuprous sulfide or copper sulfide nano wire array into a CIGS nano wire array by physical vapor deposition and heat treatment methods. The component, the phase structure and the energy band structure of the semiconductor nano wire array can be regulated by controlling the categories of deposition elements, the deposition sequence, the deposition process, post treatment and the like, so that solar photovoltaic cells with different structures and properties are prepared. Through the cell, light reflection is reduced, light absorption is increased, the probability of producing current carriers can be increased, the probability of recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is greatly improved. The method is low in cost, the preparation processes are controllable, the prepared nano wire array is uniform in structure distribution, and preparation of the nano structural thin-film solar photovoltaic cell with large area and high photoelectric conversion efficiency can be realized.
Owner:SUN YAT SEN UNIV

A Method for Controlling Electrodeformation Orientation of Ferroelectric Single Crystal

The present application provides a method for controlling the electro-strain orientation of a ferroelectric single crystal. The trigonal ferroelectric single crystal (001) surface is obliquely cut to obtain the obliquely cut single crystal; the obliquely cut single crystal is placed on the The initial polarization is performed under an external electric field, and then the polarization is performed under an external reverse electric field to obtain a reversely polarized single crystal. This application uses oblique cutting to process the (001) surface of the trigonal ferroelectric single crystal, so that the surface of the single crystal is no longer in a strict (001) orientation; in this way, when the electric field is reversed up and down, the ratio of 109° polarization reversal will increase . The present invention implements a simple oblique cutting process on (001) oriented trigonal ferroelectric single crystal, so that the surface normal does not coincide with the crystal axis, destroys the symmetry of the spontaneous polarization direction around the surface normal, and improves the 109-degree polarization reversal. Occurrence probability, so as to realize the control of the electrostrain orientation. In the present invention, heating-assisted polarization is preferred, and a single 109-degree domain switching path can be realized, which is beneficial to strain control applications such as magnetic thin film / piezoelectric single crystal heterojunction.
Owner:UNIV OF SCI & TECH OF CHINA
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