a kind of al 2 o 3 -ag@tio 2 Nanorod photoanode composite material and preparation method thereof

A composite material and nanorod technology, which is applied in the field of Al2O3-Ag@TiO2 nanorod photoanode composite material and its preparation, can solve the problems of increasing electronic recombination, reducing the photoelectric conversion efficiency of solar cells, and complicated electronic transmission paths, etc. The preparation circuit is simple, the process is precise and controllable, and the effect of promoting the separation of photogenerated carriers

Active Publication Date: 2021-11-02
ANHUI UNIV OF SCI & TECH
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Problems solved by technology

[0004] However, Ag-modified TiO 2 After TiO 2 The "capture / decapture" phenomenon of electrons caused by defects on the surface and the tortuous and complex electron transport path caused by the disordered structure will still increase the probability of recombination of electrons and holes during transport; The high fixed charge density will lead to parasitic capacitance effect, which will reduce the photoelectric conversion efficiency of solar cells

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  • a kind of al <sub>2</sub> o <sub>3</sub> -ag@tio <sub>2</sub> Nanorod photoanode composite material and preparation method thereof
  • a kind of al <sub>2</sub> o <sub>3</sub> -ag@tio <sub>2</sub> Nanorod photoanode composite material and preparation method thereof
  • a kind of al <sub>2</sub> o <sub>3</sub> -ag@tio <sub>2</sub> Nanorod photoanode composite material and preparation method thereof

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[0039] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0040] The embodiment of the present invention provides an Al 2 O 3 -Ag@TiO 2 Nanorod photoanode composite made of Al 2 O 3 TiO2 nanorod arrays (5-50 nm in thickness) coated with Ag particles are assembled.

[0041] an Al 2 O 3 -Ag@TiO 2 The preparation method of nanorod photoanode composite material comprises the following steps:

[0042] 1) TiO 2 Nanorod array preparation:

[0043] Add 0.5ml of tetra-n-butyl titanate and 1...

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Abstract

The invention discloses an Al 2 o 3 ‑Ag@TiO 2 Nanorod photoanode composite material and preparation method thereof, the composite material is made of Al 2 o 3 TiO2 nanorod arrays coated with Ag particles modified by film were assembled, in which Al 2 o 3 The thickness is 5‑50nm, and through 1) TiO 2 Nanorod array preparation, 2) Ag particle preparation process, 3) Al 2 o 3 Thin film preparation process obtains Al 2 o 3 ‑Ag@TiO 2 Nanorod photoanode composites. The atomic layer deposition Al used in the present invention 2 o 3 Thin film passivation of TiO modified by Ag particles 2 Nanorod arrays, using a combination of passivation and sensitization techniques to improve TiO 2 A facile method for nanorod arrays to make TiO 2 Nanorod arrays have higher photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemistry, in particular to a kind of Al 2 O 3 -Ag@TiO 2 Nanorod photoanode composite material and preparation method thereof. Background technique [0002] Titanium dioxide (TiO 2 ) is widely used in photocatalysis, electrochemistry, environmental purification and photovoltaics due to its excellent optical properties and chemical stability. Titanium dioxide nanorods (TiO 2 Nanorods) arrays have the characteristics of simple synthesis and low boundary resistance, which can provide direct transport channels for photogenerated carriers, effectively promote their transport and transfer, and improve the photoelectric conversion rate, thereby gaining more attention in the field of photoelectrochemistry. . [0003] However, TiO 2 The wide bandgap (~3.2 eV) of TiO2 makes it only have a strong absorption of energy near ultraviolet light, which limits its utilization to visible light; in additio...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042B82Y30/00
CPCB82Y30/00H01G9/2036Y02E10/542
Inventor 高娟查婷玉孙小卫王艳芬倪晋波
Owner ANHUI UNIV OF SCI & TECH
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