CIGS nanostructure thin-film photovoltaic battery and preparation method thereof

Abstract

The invention discloses a CIGS nanostructure thin-film photovoltaic battery and a preparation method thereof. The method is on the basis of cuprous sulfide or copper sulphide nanowire array prepared by gas solid reaction method, and combines electrochemical deposition method and heat treatment. Components, phase structure and band structure of the nanowire array in a semiconductor can be changed by changing sediment method, ion kinds in an electrolyte, sequences of ion deposition and post treatment in electrochemical deposition, thereby nanowire array solar energy photovoltaic battery of different components is prepared. The battery can reduce reflection of light, increase absorption of light, and simultaneously increase probability of generation of carriers, and reduce probability of recombination of cavities and electrons, realizing great enhancement of the photoelectric conversion efficiency. The preparation method in the invention has the advantages of simple method, low cost and low requirements of equipments, and the method is capable of being applied to large areas conveniently, the photoelectric conversion efficiency of the prepared nanostructure thin-film photovoltaic battery is relatively high.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic cells, and in particular relates to a CIGS nanostructure thin film photovoltaic cell and its preparation method and application. Background technique [0002] Solar cells can convert renewable solar energy into non-polluting electrical energy, which is a topic that has attracted more attention in the development and utilization of solar energy. At present, the solar cell materials that have been studied more include monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, cadmium sulfide, cadmium tellurium, copper indium sulfur, copper indium gallium selenide, copper indium gallium selenide sulfur and other types. With people's high requirements for the photoelectric conversion efficiency of solar cells and the development of nanotechnology, more and more people have begun to use the above materials to make thin-film solar cells, nanowire solar cells, and nanorod sol...

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Problems solved by technology

[0005] Chinese patent CN 101471394A discloses a method for preparing a light-absorbing layer of a copper indium gallium sulfur selenide thin film solar cell. The method uses a non-vacuum liquid phase chemical method to prepare a copper indium gallium selenide sulfur thin film. The preparation process is simple, the cost is low, and the equipment investment is small. High utilization rate, strong controllability, good repeatability, easy to realize large-area, high-quality film preparation and large-scale production, but it is necessary to add a variety of solution regulators during the preparation process, which is easy to introduce impurities and affect the crystallization of the film sex has an impact

Although there are a variety of nanowire solar cells prepared by Au particle catalysis and electrochemical methods using templates, there is no method that is simple in process, low in fabrication cost, and can be used for the preparation of large-area nanowire solar cells.

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