The invention discloses a method for preparing a low-resistance
titanium nitride film through low-temperature magnetron
sputtering. The method comprises the steps of using a
chip with one side polished as a substrate, selecting ultrahigh vacuum magnetron
sputtering equipment, and placing the
chip on a heating table; closing a vacuum cavity cover,
vacuum pumping, and inputting
nitrogen and
argon for magnetron
sputtering; stopping input of the
nitrogen and the
argon after sputtering; turning off a molecular pump and a mechanical pump after cooling, opening a vent valve, and taking out a sample after the temperature of the heating table decreases to the normal temperature to obtain the low-resistance
titanium nitride film; adjusting the sputtering power, working
voltage, the temperature during film sputtering, the
flow ratio of the
nitrogen and the
argon and the total flow so that the low-resistance
titanium nitride film is made finally, and the thickness of the film is controlled through controlling the sputtering power and the sputtering time. In the method disclosed by the invention, the
heating temperature of the required substrate is low, only 400 DEG C, and the feasibility is high; the
titanium nitride film prepared is low in resistance, high in uniformity and flatness, and wide in application prospect.