The invention discloses a method for preparing a low-resistance titanium nitride film through low-temperature magnetron sputtering. The method comprises the steps of using a chip with one side polished as a substrate, selecting ultrahigh vacuum magnetron sputtering equipment, and placing the chip on a heating table; closing a vacuum cavity cover, vacuum pumping, and inputting nitrogen and argon for magnetron sputtering; stopping input of the nitrogen and the argon after sputtering; turning off a molecular pump and a mechanical pump after cooling, opening a vent valve, and taking out a sample after the temperature of the heating table decreases to the normal temperature to obtain the low-resistance titanium nitride film; adjusting the sputtering power, working voltage, the temperature during film sputtering, the flow ratio of the nitrogen and the argon and the total flow so that the low-resistance titanium nitride film is made finally, and the thickness of the film is controlled through controlling the sputtering power and the sputtering time. In the method disclosed by the invention, the heating temperature of the required substrate is low, only 400 DEG C, and the feasibility is high; the titanium nitride film prepared is low in resistance, high in uniformity and flatness, and wide in application prospect.