Radiating modular structure of semiconductor package and manufacturing method thereof

Abstract

The invention relates to a radiating modular structure of a semiconductor package and a manufacturing method. At least one semiconductor semiconductor package comprising a chip carrying piece, a semiconductor chip arranged on the chip carrying piece, and a first radiating piece arranged on the semiconductor chip is provided, so that the semiconductor package is electrically connected to an external electronic device through the chip carrying piece; and then at least one second radiating piece is arranged on the first radiating piece of the semiconductor package, and the size of the second radiating piece is larger than that of the first radiating piece; therefore, the semiconductor package, the first radiating piece, the external electronic device and the second radiating piece are combined in a modular mode to improve the radiating efficiency of the semiconductor package.

Description

technical field [0001] The invention relates to a heat dissipation modular structure and a manufacturing method thereof, in particular to a heat dissipation modular structure of a semiconductor package and a manufacturing method thereof. Background technique [0002] Currently, the prior art of using a flexible carrier board as a packaged chip carrier to electrically connect the chip to the flexible substrate can be roughly divided into tape carrier package (Tape Carrier Package, TCP) and flip chip film (Chip on Film, COF) and other technologies, among which the driver IC packaging process of the display uses the TCP substrate and the COF soft board as the package carrier of the driver IC, which is the largest application of related technologies at present. [0003] However, a highly integrated semiconductor chip will generate a large amount of heat during operation. If the heat generated by the semiconductor chip is not dissipated effectively in time, the performance and li...

AI Technical Summary

Problems solved by technology

[0011] The size of the heat dissipation elements combined in the above-mentioned semiconductor packaging structure is limited by the size of the packaging structure itself, and for the semiconductor packaging structure applied to the tape-and-reel package or the flip-chip film technology, all have small size, The characteristics of high power are often limited by the small area of ​​the heat dissipation element of the package structure itself, so that the effect of effective heat dissipation cannot be achieved.

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