The present application relates to a kind of
tellurium /
carbon nitride p-n
heterojunction photocatalyst and its preparation method and application, preparation method includes the following steps: S1,
tellurium compound and carbon-
nitrogen compound are dispersed in deionized water, after ultrasonic mixing sufficiently, precursor homogeneous solution is obtained;S2, precursor homogeneous solution obtained in step S1 is carried out
hydrothermal reaction, cooling, centrifugal, washing,
drying after obtaining supramolecular intermediate;S3, supramolecular intermediate obtained in step S2 is calcined with gas, and after
grinding,
tellurium /
carbon nitride p-n
heterojunction composite photocatalyst
powder is obtained.Compared with prior art, the tellurium /
carbon nitride p-n
heterojunction photocatalyst prepared in the present application realizes the accelerated migration of tellurium
conduction band photo-generated electrons to carbon
nitride conduction band, and the accelerated migration of carbon
nitride valence band photo-generated holes to tellurium
valence band, inhibits the recombination of carrier, improves
charge separation and migration efficiency, so as to enhance photocatalytic activity.