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Method for preparing low-resistance titanium nitride film through low-temperature magnetron sputtering

A technology of magnetron sputtering and titanium nitride, which is applied in sputtering plating, ion implantation plating, metal material coating technology, etc., can solve the problems of low resistivity and complicated process, and achieve low resistivity and process Simplicity, good uniformity and flatness

Inactive Publication Date: 2017-08-18
ZHEJIANG UNIV
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Problems solved by technology

In the post-annealing, lower resistivity can also be obtained by increasing the annealing temperature, but this is not only a complicated process, but also the annealing temperature is also around 700 degrees

Method used

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  • Method for preparing low-resistance titanium nitride film through low-temperature magnetron sputtering

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Embodiment 1

[0027] The magnetron sputtering coating machine in this embodiment adopts the three-target ultra-vacuum magnetron sputtering coating equipment developed by Shenyang Judong Vacuum Technology Research Institute.

[0028] 1) Install a titanium target with a purity of 99.999% at the target head of the three-target ultra-vacuum magnetron sputtering coating equipment. The target material is a cylinder with a diameter of 76 mm and a thickness of 5 mm. Adjust the positions of the heating table and the titanium target so that Keep it at 15cm.

[0029] 2) RCA standard cleaning single-polished two-inch silicon wafers, using the whole silicon wafer or a 15mm×15mm silicon wafer obtained by dicing as the substrate;

[0030] 3) Put the silicon substrate into the heating table of the magnetron sputtering chamber, adjust the heating table so that the distance between the substrate and the titanium target is kept at 15 cm, and the polished surface of the silicon wafer faces the titanium target;...

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Abstract

The invention discloses a method for preparing a low-resistance titanium nitride film through low-temperature magnetron sputtering. The method comprises the steps of using a chip with one side polished as a substrate, selecting ultrahigh vacuum magnetron sputtering equipment, and placing the chip on a heating table; closing a vacuum cavity cover, vacuum pumping, and inputting nitrogen and argon for magnetron sputtering; stopping input of the nitrogen and the argon after sputtering; turning off a molecular pump and a mechanical pump after cooling, opening a vent valve, and taking out a sample after the temperature of the heating table decreases to the normal temperature to obtain the low-resistance titanium nitride film; adjusting the sputtering power, working voltage, the temperature during film sputtering, the flow ratio of the nitrogen and the argon and the total flow so that the low-resistance titanium nitride film is made finally, and the thickness of the film is controlled through controlling the sputtering power and the sputtering time. In the method disclosed by the invention, the heating temperature of the required substrate is low, only 400 DEG C, and the feasibility is high; the titanium nitride film prepared is low in resistance, high in uniformity and flatness, and wide in application prospect.

Description

technical field [0001] The invention relates to a method for preparing a thin film, in particular to a method for preparing a low-resistance titanium nitride thin film by a low-temperature magnetron sputtering method. Background technique [0002] Titanium nitride crystals belong to the cubic crystal system and have a face-centered cubic structure with a lattice constant of 0.4239nm. Titanium nitride thin films have excellent thermal, electrical, mechanical properties and good chemical stability. Because titanium nitride film has good chemical compatibility and electrical and thermal conductivity, it is often used as electrode material and barrier layer in microelectronic devices; and its surface plasmon excitation effect in the visible and near-infrared regions also makes it have Potential to become an important component of new optoelectronic devices. [0003] At present, the common methods for preparing low-resistance titanium nitride thin films include chemical vapor d...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
CPCC23C14/35C23C14/0036C23C14/0641
Inventor 卢乾波叶辉白剑陈超楠
Owner ZHEJIANG UNIV
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