Preparation method of chlorine-doped multilayer graphene film
A multi-layer graphene and film preparation technology, applied in the direction of graphene, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of cumbersome, consumable steps, not suitable for mass production, etc., and achieve technical route innovation, equipment and process The effect of simple process, excellent photoelectricity and luminescence modulation performance
Active Publication Date: 2017-04-26
KUNMING INST OF PHYSICS
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Problems solved by technology
[0006] What the present invention aims to solve is the problem that the existing graphene film or doped graphene film synthesis technology is not only consumable but also has cumbersome steps and is not suitable for mass production. It provides a method for effectively modulating graphite by doping heterogeneous chlorine atoms The energy level of the graphene film, so that the optoelectronic properties of the graphene film are optimized for the preparation of chlorine-doped multilayer graphene film
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Embodiment 1
[0022] Embodiment 1: A kind of preparation method of chlorine-doped multi-layer graphene film, adopts the solution after the reaction of ethylene glycol and hydrochloric acid according to certain molar ratio to generate chlorine-doped graphene film at one time after spin-coating annealing, including liquid phase chemistry The three steps of reaction, spin coating and annealing are as follows:
[0023] 1) Liquid-phase chemical reaction: Take 30 ml of ethylene glycol and 9 ml of hydrochloric acid, put them in a 100 ml beaker, stir with a mechanical stirrer and heat on the heating plate at the same time, set the temperature of the heating plate to 200°C until the evenly mixed solution becomes Until it is golden yellow and does not continue to change color, keep the uniform brown color and put it in a brown sample bottle for later use;
[0024] 2) Spin coating: Make a 0.5 g / ml solution of the chlorine-doped graphene precursor in step 1) and drop an appropriate amount on the treate...
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The invention discloses a preparation method of a chlorine-doped multilayer graphene film, relates to a preparation method of a semiconductor type chlorine-doped graphene film, and especially relates to a preparation method of a chlorine-doped multilayer graphene film with good photoelectric performance, obtained by preparing a solution by use of a simple-process liquid-phase chemical reaction, then performing spin coating and then performing high-temperature annealing processing by use of cheap glycol and sulfuric acid as raw materials. The preparation method of the chlorine-doped multilayer graphene film is characterized in that the chlorine-doped graphene film is generated at a time by performing spin coating and annealing on a solution generated through a reaction by use of glycol and hydrochloric acid according to a certain mol ratio and the method comprises three steps, i.e., the liquid-phase chemical reaction, the spin coating and the annealing. According to the preparation method of the semiconductor type chlorine-doped graphene film, through a chlorine doping mode, the energy grade of the graphene film is modulated, the performance of the graphene film is effectively changed, the chlorine-doped graphene film prepared by use of the method is enabled to have better photoelectric and luminescence modulation performance, and the method can be applied to the field of a photoelectric detector.
Description
technical field [0001] The invention relates to a method for preparing a semiconductor-type sulfur-doped graphene film, especially using cheap ethylene glycol and sulfuric acid as raw materials, using a liquid-phase chemical reaction method with a simple process to make a solution, then spin-coating and high-temperature annealing to obtain a graphene film with good photoelectric performance Preparation method of chlorine-doped multilayer graphene film. Background technique [0002] Doped graphene film, in addition to inheriting many excellent properties of graphene such as good water solubility, large surface area, high carrier mobility, good mechanical flexibility and stable optical performance, because it also has significant quantum confinement effect and The edge effect has special optical properties, electronic properties, and spin properties, so it has received extensive attention and research in recent years. Graphene film preparation techniques are diverse, includin...
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IPC IPC(8): H01L21/02C01B32/184
CPCH01L21/02527H01L21/02623
Inventor 唐利斌姬荣斌项金钟张倩
Owner KUNMING INST OF PHYSICS
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