Method for preparation of semiconductor type sulfur-doped graphene film
A technology for preparing sulfur-doped graphene and thin films, which is applied in the fields of graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of cumbersome, unsuitable for mass production, consumables steps, etc., and achieves technological route innovation, excellent optoelectronics and The effect of luminescence modulation performance, equipment and process simplicity
Active Publication Date: 2017-04-26
KUNMING INST OF PHYSICS
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Problems solved by technology
[0006] What the present invention is to solve is the problem that the existing graphene film or doped graphene film synthesis technology is not only consumable but also has cumbersome steps and is not suitable for mass production. It provides a method for effectively modulating graphite by doping heterogeneous sulfur atoms The energy level of the graphene film, so that the optoelectronic performance of the graphene film is optimized, the preparation method of the semiconducting sulfur-doped graphene film
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Embodiment 1
[0022] Example 1: A method for preparing a semiconductor-type sulfur-doped graphene film. The solution produced by the reaction of ethylene glycol and sulfuric acid in a certain molar ratio is spin-coated and annealed to form a sulfur-doped graphene film at one time, including liquid phase chemistry The three steps of reaction, spin coating and annealing are as follows:
[0023] 1) Liquid phase chemical reaction: Take 30 ml of ethylene glycol and 6 ml of sulfuric acid, place them in a 100 ml beaker, stir with a mechanical stirrer while heating on the heating plate, set the heating plate temperature to 200 ℃, until the mixed solution becomes uniform It is brown and does not continue to change color; filter the brown solution to remove the black carbonized precipitate in the solution, keep the uniform brown clear night, and put it in a brown sample bottle for later use;
[0024] 2) Spin coating: Use a disposable dropper to take an appropriate amount of the sulfur-doped graphene precu...
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The invention relates to a method for preparation of a semiconductor type sulfur-doped graphene film, especially to a method for preparing the semiconductor type sulfur-doped graphene film with good photoelectric properties by using cheap ethylene glycol and sulfuric acid as raw materials through using a liquid-phase chemical reaction process with a simple technology to prepare a solution, and then performing spin coating and performing high-temperature annealing. The method for preparation of the semiconductor type sulfur-doped graphene film is characterized by comprising the steps of using ethylene glycol and sulfuric acid according to a certain molar ratio to perform a reaction to prepare a solution, and performing spin coating and annealing, so as to prepare the sulfur-doped graphene film at a time, and the process comprises three steps of a liquid phase chemical reaction, spin coating and annealing. By doping sulfur, the energy level of the graphene film is modulated, and the properties of the graphene film are effectively changed. So the prepared sulfur-doped graphene film by the invention has excellent photoelectric and luminescence modulated properties and can be used in the field of photoelectric detectors.
Description
Technical field [0001] The invention relates to a method for preparing a semiconductor-type sulfur-doped graphene film, in particular, it uses cheap ethylene glycol and sulfuric acid as raw materials, and uses a simple liquid phase chemical reaction method to prepare a solution, then spin coating and then high-temperature annealing treatment to obtain a good photoelectric performance Method for preparing semiconductor-type sulfur-doped graphene film. Background technique [0002] The doped graphene film inherits many excellent properties such as graphene's good water solubility, large surface area, high carrier migration rate, good mechanical flexibility, and stable optical performance because of its significant quantum confinement effect and Edge effect, with special optical properties, electronic properties, spin properties, etc., has received extensive attention and research in recent years. Graphene film preparation technologies are diverse, including nano-etching, hydrother...
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IPC IPC(8): C01B32/184
CPCC01B2204/22C01P2002/82C01P2002/84C01P2002/85C01P2004/04C01P2004/80
Inventor 唐利斌姬荣斌项金钟张倩袁绶章赵俊孔金丞郑云魏虹洪建堂铁筱滢左大凡康蓉王向前王燕韩福忠
Owner KUNMING INST OF PHYSICS
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