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Graphite-phase carbon nitride film and preparation method thereof

A graphite phase carbon nitride, thin film technology, applied in vacuum evaporation plating, coating, sputtering plating and other directions, can solve the problems of poor controllability of the evaporation process, improve photoelectric and photoelectrochemical performance, good uniformity , to improve the effect of the conduction process

Active Publication Date: 2019-12-20
GUANGZHOU JINYUANDA ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this type of method usually directly heats the nitrogen-rich precursor, and its evaporation process is poorly controllable, and the uniformity, light transmittance, and photoelectric and photoelectrochemical properties of the obtained film need to be further improved.

Method used

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  • Graphite-phase carbon nitride film and preparation method thereof
  • Graphite-phase carbon nitride film and preparation method thereof
  • Graphite-phase carbon nitride film and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0045] This embodiment provides a graphite phase carbon nitride film, the preparation method of which comprises:

[0046]Weigh 10g of melamine, load it into an open quartz boat, and place it in the center of the tube furnace; raise the temperature to 350°C under a flowing nitrogen atmosphere, with a heating rate of 10°C / min, and keep it warm for 1 hour; after the initial pyrolysis and polycondensation , naturally cooled to room temperature, and the pyrolysis product was ground into a powder sample; the above powder was loaded into a quartz boat, and the cleaned glass substrate was covered on the quartz boat and placed in the central position of the tube furnace. Under a nitrogen atmosphere, the temperature was raised to 550° C. at a heating rate of 10° C. / min, kept for 4 hours, and finally cooled to room temperature to obtain a graphite phase carbon nitride film with a thickness of about 430 nm.

Embodiment 2

[0048] This embodiment provides a graphite phase carbon nitride film, the preparation method of which comprises:

[0049] Weigh 10g of melamine, load it into an open quartz crucible, and place it in the center of the tube furnace; raise the temperature to 350°C under a flowing nitrogen atmosphere, with a heating rate of 10°C / min, and keep it warm for 1 hour; after the initial pyrolysis and polycondensation , naturally cooled to room temperature, and the pyrolysis product was ground into a powder sample; the above powder was put into a quartz crucible, and the quartz crucible was covered with a cleaned quartz glass substrate and placed in the central position of the tube furnace. Under a flowing nitrogen atmosphere, the temperature was raised to 550° C. at a heating rate of 10° C. / min, kept for 4 hours, and finally cooled to room temperature to obtain a graphite phase carbon nitride film with a thickness of about 310 nm.

Embodiment 3

[0051] This embodiment provides a graphite phase carbon nitride film, the preparation method of which comprises:

[0052] Weigh 10g of melamine and load it into an open quartz boat, and place it in the center of the tube furnace; raise the temperature to 350°C in an air atmosphere, with a heating rate of 10°C / min, and keep it warm for 1 hour; after the initial pyrolysis and polycondensation, Naturally cool to room temperature, grind the pyrolysis product into a powder sample; put the above powder into a quartz boat, cover the cleaned glass substrate on the quartz boat and place it in the central position of the tube furnace, in the air atmosphere The temperature was raised to 550° C. at a heating rate of 5° C. / min, kept for 6 hours, and finally cooled to room temperature to obtain a graphite phase carbon nitride film with a thickness of about 340 nm.

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Abstract

Belonging to the field of photoelectric and photoelectrochemical films and application, the invention provides a graphite-phase carbon nitride film and a preparation method thereof. The preparation method includes the steps of: taking a nitrogen-rich organic matter as the precursor, subjecting the precursor to heat preservation at 350-400DEG C for 1-6h for primary pyrolysis polymerization, and grinding the obtained product into a powdery sample; spreading the powdery sample in a heat-resistant carrier, placing a substrate material at an opening of the heat-resistant carrier, then placing the heat-resistant carrier at 500-600DEG C, carrying out heat preservation for 2-8h, and conducting evaporation deposition polymerization, and performing cooling to obtain a graphite-phase carbon nitride film on the surface of the substrate material. The graphite-phase carbon nitride film prepared by the method is more uniform, and has lower surface roughness and better light transmittance. The methodprovided by the invention is simple and easy to operate, and has wide application prospects.

Description

technical field [0001] The invention relates to the field of photoelectric and photoelectrochemical thin films, in particular to a graphite phase carbon nitride thin film and a preparation method thereof. Background technique [0002] As a new type of photocatalytic semiconductor, graphitic carbon nitride exhibits excellent thermal and chemical stability, and has a reasonable band gap and band edge structure. In addition, the material does not contain metal elements, the raw material is cheap and the preparation process is simple, so it has broad application prospects in the fields of hydrogen production by photolysis of water, degradation of organic pollutants, and biosensing imaging. [0003] So far, people have made great progress in the research of graphite-phase carbon nitride powder suspension system, fully demonstrating the excellent performance of this material in the field of photocatalysis. However, how to prepare high-quality graphitic carbon nitride films is the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C23C14/06C23C14/24
CPCC03C17/225C03C2218/151C23C14/0658C23C14/24
Inventor 赵元春赵紫琼李彤叶斗志
Owner GUANGZHOU JINYUANDA ELECTRONICS TECH CO LTD
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