Process for preparing self-sealing silicon carbide ceramic based composite material
A technology of composite materials and silicon carbide, which is applied in the field of preparation of self-healing silicon carbide ceramic matrix composite materials, can solve the problems of easy peeling, long time, complicated process, etc., and achieves improved thermal oxidation life, strong oxidation resistance, The effect of simple process
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Embodiment 1
[0024] (1) Use 2D plain carbon cloth with brand T300 as the reinforcement of the composite material, and cut the 2D fiber cloth to a specification of 250mm×125mm;
[0025] (2) Laminate 2-dimensional carbon fiber cloth and shape it with a graphite mold. The thickness of the fiber prefabricated body is 2.3mm;
[0026] (3) Infiltrating the carbon fiber preform into the pyrolytic carbon interface layer, the thickness of which is 100nm;
[0027] (4) High temperature treatment is performed on the carburized preform, the treatment temperature is 1700°C, the treatment atmosphere is Ar gas, and the treatment time is 3.0 hours;
[0028] (5) Put the preform after high temperature heat treatment into the chemical vapor infiltration furnace to infiltrate the silicon carbide substrate, the infiltration temperature: 900°C, the holding time: 150h, the pressure in the furnace: 2kPa, the precursor is CH 3 SiCl 3 ;
[0029] (6) Continue to infiltrate the boron carbide matrix, infiltration tem...
Embodiment 2
[0033] (1) Use the 3D carbon fiber with the brand name T300 as the reinforcement of the composite material, and weave the 3D fiber into a length and width of 250mm×125mm and a thickness of 4.5mm;
[0034] (2) The 3-dimensional carbon fiber braid is directly fixed and formed with a graphite mold;
[0035] (3) Infiltrating the carbon fiber preform into the pyrolytic carbon interface layer, the thickness of which is 300nm;
[0036] (4) High temperature treatment is performed on the carburized preform, the treatment temperature is 2100°C, the treatment atmosphere is Ar gas, and the treatment time is 1.0 hour;
[0037] (5) Put the preform after high temperature heat treatment into the chemical vapor infiltration furnace to infiltrate the silicon carbide substrate, the infiltration temperature: 1050°C, the holding time: 100h, the pressure in the furnace: 2kPa, the precursor is CH 3 SiCl 3 ;
[0038] (6) Continue to infiltrate boron carbide matrix, infiltration temperature: 1050°C...
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