The invention belongs to the field of inorganic
crystal materials, and particularly relates to a preparation method and application of an Rb2CuBr3
single crystal and a
wafer. According to the preparation method of the Rb2CuBr3
single crystal, the
raw material ratio and the
solvent dosage are optimized, and a cooling method induced by a same-component
seed crystal is adopted for growth, so that ions seamlessly and epitaxially grow along a
seed crystal structure, polycrystals or defects are avoided, solute is more easily and directionally deposited on the surface of the
seed crystal, and the
crystal quality is improved. The Rb2CuBr3
wafer with the inch-level size is prepared by further combining with a
hot pressing process, the nano / micron-level limitation of a traditional process is broken through, size rising from a rod-shaped
single crystal to a large-area
wafer is achieved, and the
crystal growth efficiency and size uniformity are remarkably improved. The photoelectric property of the Rb2CuBr3 wafer is remarkably improved, the luminous
quantum yield reaches 96.84%, the
exciton lifetime is 69.01 microseconds, the
ultraviolet responsivity reaches 177.4 mA / W, the
specific detection rate is improved to 1.9 * 10 < 13 > Jones, the large-area application requirement of a high-sensitivity detection device is met, and the application of the Rb2CuBr3 wafer in the fields of
ultraviolet photoelectric detection and X-
ray detection is expanded.