The invention belongs to the technical field of
halide semiconductor nuclear detection, and particularly relates to a bipolar charge transfer
halide semiconductor single crystal for high-energy
radiation detection and a preparation method and application thereof. The general formula of the
crystal is Cs1-xAxPb1-yByBr3-zXz, A is one or more of Na, K, Rb, Cu, Tl and H3O, B is one or more of Si, Ge, Sn, Mg, Ca, Sr, Ba, Zn, Cd and Hg, X is one or more of F, Cl, I, BF4, HCOO, OH, CN, SCN, NCS, SH, NO3 and H2POO, 0 < = x < = 1, 0 < = y < = 1, and 0 < = z < = 3. Zone-melting purification is combined with the vertical
Bridgman method, the crack-free large-size high-quality
single crystal is prepared, the
crystal yield and the device uniformity are improved, bipolar charge transfer is achieved, the device structure is simplified, and the method can be widely applied to the field of
nuclear detection.