The invention discloses a red light semiconductor laser based on a GexSi<1-x> variable lattice constant matrix. The laser structurally comprises an N-surface electrode, a germanium substrate, a strainbuffer layer, a germanium-silicon matrix layer, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, a quantum barrier, an upper waveguide layer, an upper limiting layer,a barrier layer, a dielectric film, an ohmic contact layer and a P-surface electrode in sequence from bottom to top. According to the red-light semiconductor laser, the tension strain of the quantum well is reduced while the active region lasing wavelength is shortened, the problem that the active region with large tension strain has many defects in an ultra-short wavelength red-light laser can besolved, and meanwhile, the output power and the photoelectric conversion efficiency of a band laser are also improved.