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Method for preparing graphene toughened silicon carbide ceramic composite material

A technology of ceramic composite materials and tough silicon carbide, which is applied in the field of preparation of graphene toughened silicon carbide ceramic composite materials, can solve the problems of low interface bonding strength, reduced oxidation resistance, and poor material uniformity, so as to improve the interface strength And anti-oxidation ability, improve compactness and high temperature resistance, increase the effect of crack growth resistance

Active Publication Date: 2016-07-27
ZHONGYUAN ENGINEERING COLLEGE
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Problems solved by technology

However, the disadvantage of these methods is that graphene is very easy to agglomerate and has poor dispersion. If it is directly mixed with silicon carbide mechanically, the uniformity of the material will be poor. At the same time, the interface bonding strength between graphene and silicon carbide is not high. The anti-oxidation performance under the above oxygen atmosphere is greatly reduced, and cracks and pores are prone to occur, so that the oxidizing medium can directly act on the inside of the material at high temperature, weakening the anti-oxidation ability, shortening the life, and seriously affecting the high-temperature mechanical properties of the composite material.

Method used

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preparation example Construction

[0025] A preparation method of graphene toughened silicon carbide ceramic composite material, comprising the steps of:

[0026] (1) Add graphene into alcohol aqueous solution and stir evenly, ultrasonically disperse for 0.5~5 hours, and prepare graphene dispersion with a concentration of 0.5g / L~5g / L;

[0027] (2) According to the mass ratio of ethyl orthosilicate and graphite oxide of 20:1~1:1, add ethyl orthosilicate to the graphite oxide solution, then add a small amount of reducing agent, and continue magnetic stirring for 0.5~5 hours, so that It is fully dissolved and mixed uniformly to obtain a mixed solution of graphite oxide / tetraethyl orthosilicate;

[0028] (3) Place the above-mentioned graphite oxide / tetraethyl orthosilicate mixed solution in a stainless steel reaction kettle, heat at 100-200°C, and perform a hydrothermal reduction reaction for 1-24 hours. After the reaction is completed, the product is suction-filtered, washed repeatedly with deionized water and ab...

Embodiment 1

[0033] Weigh 20 mg of graphite oxide and add it to 40 mL of alcoholic water solution (the volume ratio of absolute ethanol and deionized water is 1:9), stir evenly, and ultrasonically disperse for 0.5 hours. The concentration of the prepared graphite oxide solution is 0.5 g / L. Then add 0.4 g of tetraethyl orthosilicate and 1 mL of reducing agent ammonia, wherein the mass ratio of tetraethyl orthosilicate to graphite oxide is 20:1, and continue magnetic stirring for 0.5 hours to fully dissolve and mix evenly. Place the graphite oxide / tetraethyl orthosilicate mixed solution in a stainless steel reaction kettle with a volume of 100mL, the volume ratio of the solution is 40%, and the heating temperature is 100 o C, hydrothermal reduction reaction for 1 hour. After the reaction was completed, the product was suction filtered, washed repeatedly with deionized water and absolute ethanol, and dried in vacuum at 50°C for 12 hours to obtain SiO 2 Wrapped graphene composite powder. The...

Embodiment 2

[0035] Weigh 180 mg of graphite oxide and add it to 60 mL of alcoholic water solution (the volume ratio of absolute ethanol and deionized water is 1:1), stir evenly, ultrasonically disperse for 3 hours, and the concentration of the prepared graphite oxide solution is 3 g / L. Then add 1.8 g of tetraethyl orthosilicate and 5 mL of reducing agent ammonia water, wherein the mass ratio of tetraethyl orthosilicate to graphite oxide is 10:1, and continue magnetic stirring for 3 hours to fully dissolve and mix evenly. The graphite oxide / tetraethyl orthosilicate mixed solution was placed in a stainless steel reaction kettle with a volume of 100mL, the volume ratio of the solution was 60%, the heating temperature was 150°C, and the hydrothermal reduction reaction was carried out for 12 hours. After the reaction was completed, the product was suction filtered, washed repeatedly with deionized water and absolute ethanol, and dried in vacuum at 80°C for 48 hours to obtain SiO 2 Wrapped grap...

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Abstract

The invention belongs to the field of macromolecule inorganic chemistry, and in particular relates to a method for preparing a graphene toughened silicon carbide ceramic composite material. Specifically, the method comprises the following steps: by taking graphite oxide as a carbon source, wrapping the surface of reduced graphene oxide with a layer of SiO2 granules by using a hydrothermal method so as to form a good interface layer between graphene and SiC, uniformly dispersing, and implementing carbon thermal reduction reaction at the interface of graphene and SiO2 in the high-temperature sintering process so as to growth silicon carbide crystal whisker and granules in situ, thereby improving the interface strength and the oxidation resistance, achieving an interface intensification function, improving crack expansion resistance and further improving the fracture toughness of ceramic. The method aims at the defects that graphene is poor in dispersity and high-temperature oxidation resistance in a conventional graphene / silicon carbide composite material, in-situ growth, crack self-healing and toughness mechanisms are applied to a preparation technique of a graphene / silicon carbide material, and thus graphene toughened silicon carbide ceramic with excellent mechanical properties and interface binding properties can be prepared.

Description

technical field [0001] The invention belongs to the field of macromolecular inorganic chemistry, and in particular relates to a preparation method of a graphene-toughened silicon carbide ceramic composite material. Background technique [0002] Silicon carbide ceramics have the characteristics of high temperature resistance, high hardness, wear resistance, low thermal expansion coefficient, high thermal conductivity, chemical corrosion resistance, dielectric, and wave penetration. Broad application prospects. However, since silicon carbide is a stable compound with strong covalent bonds, it has low thermal diffusivity and is difficult to sinter and densify. At the same time, silicon carbide ceramics have defects such as high brittleness, poor high temperature oxidation resistance, easy cracks, and short service life. , limiting its application under high temperature conditions. Therefore, it is urgent to develop a new silicon carbide ceramic material with high density, hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/81C04B35/80C04B35/565C04B35/628
CPCC04B35/565C04B35/62839C04B35/806C04B2235/3418C04B2235/425C04B2235/5276
Inventor 秦琦高斌张旺玺牛捷琳张锐刘文华
Owner ZHONGYUAN ENGINEERING COLLEGE
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