Welding method of tungsten target material component

Abstract

The invention discloses a welding method of a tungsten target material component. The welding method comprises the following steps: providing a tungsten target material and a copper back plate; turning threads in the welding surface of the tungsten target material; forming a groove in the copper back plate; mounting the tungsten target material in the groove; welding the tungsten target material and the copper back plate by a hot isostatic pressure method. Through the use of the welding method, the threads are turned in the welding surface of the tungsten target material, the groove is formed in the copper back plate, and the tungsten target material and the copper back plate are mounted together, so that the tungsten target material is positioned in the groove; then welding by the hot isostatic pressure method is performed, in the welding process, the deformation quantity of the tungsten target material is small, and a fragmentation phenomenon not easily occurs; in addition, because of the threads, the area of the welding surface of the tungsten target material is enlarged, and the welding strength of the tungsten target material component is improved; after welding, the threads are embedded in the copper back plate from the welding surface of the tungsten target material, so that the welding strength of the tungsten target material component is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method for a tungsten target assembly. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate that can be combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. For example, metal tungsten (Co) can be selected as the target material, and copper or copper alloy material with sufficient strength and high thermal and electrical conductivity can be selected as the back plate to form the target component. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh. For example, the ambient temperature of the target assembly is relatively high, such as 300°C to 600°C; in addit...

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Problems solved by technology

[0008] In the existing diffusion welding process, the deformation of the tungsten target is relatively large. Because tungsten is brittle, the tungsten target is prone to cracks during the welding process. The occurrence of cracks will lead to accidents when the tungsten target component is used in the future. , and due to the large difference in physical properties between tungsten and copper

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