Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate

Abstract

Disclosed is a diffusion welding method for a tungsten-titanium alloy target and a copper alloy back plate. An aluminum diffusion auxiliary layer is arranged between the tungsten-titanium alloy target and the copper alloy back plate, diffusion welding of the tungsten-titanium alloy target, the aluminum diffusion auxiliary layer and the copper alloy back plate is realized by the aid of high-strength atomic diffusivity between the tungsten-titanium alloy target and the aluminum diffusion auxiliary layer and between the aluminum diffusion auxiliary layer and the copper alloy back plate, and finally, welding quality of the tungsten-titanium alloy target and the copper alloy back plate is improved. Diffusion welding of the tungsten-titanium alloy target and the copper alloy back plate is implemented by a hot isostatic pressing process. As diffusion welding is performed in a vacuum sheath and air is isolated, the contact surface of welded metal can be effectively prevented from being oxidized, the bonding strength of the tungsten-titanium alloy target, the aluminum diffusion auxiliary layer and the copper alloy back plate is enhanced, the target is prevented from being separated from the back plate during sputtering, and sputtering coating is normally performed. A target assembly formed by the diffusion welding method has the advantages of high bonding compactness, high thermal deformation resistance and the like.

Description

technical field [0001] The invention relates to the manufacture of sputtering targets in the field of semiconductors, in particular to a diffusion welding method for a tungsten-titanium alloy target and a copper alloy back plate. Background technique [0002] High-purity tungsten, titanium or their alloys have high resistance to electron migration, high temperature stability and the ability to form stable silicides, so they are often used as gate, connection, transition and barrier metal layers in the form of thin films in the electronics industry. use. Especially in the preparation of VLSI, it has good performance as a resistance layer and a diffusion barrier layer. [0003] In the modern large-scale integrated circuit manufacturing process, magnetron sputtering has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, and good film-substrate bonding force. High-purity tungsten targets and high-p...

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a method for diffusion welding of a tungsten-titanium alloy target and a copper alloy backplate, which solves the problem of tungsten-titanium alloy target and copper alloy backplate in the existing welding process of the tungsten-titanium alloy target and copper alloy backplate The problem of poor welding effect and demanding process conditions

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