Integrated trench mosfet and junction barrier schottky rectifier with trench contact structures

a technology of junction barrier and trench contact structure, which is applied in the field of cell structure, device configuration and fabrication process of power semiconductor devices, can solve the problems of trench schottky diodes occupying additional space for planar contact, trench schottky diodes further suffering from a high leakage between drain and source, and achieve the effect of improving the configuration of semiconductor power devices
US20090315107A1Active Publication Date: 2009-12-24FORCE MOS TECH CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
FORCE MOS TECH CO LTD
Publication Date
2009-12-24

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Abstract

A trench MOSFET in parallel with trench junction barrier Schottky rectifier with trench contact structures is formed in single chip. The present invention solves the drawback brought by some prior arts, for example, the large area occupied by planar contact structure and high gate-source capacitance. As the electronic devices become more miniaturized, the trench contact structures of this invention are able to be shrunk to achieve low specific on-resistance of Trench MOSFET, and low Vf and reverse leakage current of the Schottky Rectifier.
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Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] This invention relates generally to the cell structure, device configuration and fabrication process of power semiconductor devices. More particularly, this invention relates to an improved cell configuration and processes to manufacture trench MOSFET device with junction barrier Schottky rectifier in the same cell so that integrated cells with spacing savings and lower capacitance and higher performance are achieved.

[0003] 2. The Prior Arts

[0004] Normally for high efficiency DC / DC application, a Schottky rectifier is externally added in parallel with a MOSFET device. FIG. 1 is a circuit diagram that illustrates the implementation of a Schottky diode with a power MOSFET device. Once the parasitic P / N diode is turned on, both the electron and hole carriers are generated thus require longer time to eliminate the carriers by electron-hole combination. In order to achieve higher speed and efficiency, the Schottky diode (SKY) ...

Claims

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