Output driving circuit and transistor output circuit

A technology for outputting drive circuits and output transistors, applied in logic circuits, electrical components, electronic switches, etc., can solve problems such as damage to transistor devices

Inactive Publication Date: 2013-02-13
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the power supply voltage is higher than the source-gate breakdown voltage BVsg, the transistor device may be damaged

Method used

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  • Output driving circuit and transistor output circuit
  • Output driving circuit and transistor output circuit
  • Output driving circuit and transistor output circuit

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Embodiment Construction

[0032] Embodiments of the present invention that achieve the above objects will be described with reference to the accompanying drawings. In this description, the same elements are denoted by the same reference numerals, and additional descriptions that repeat or limit the understanding of the meaning of the present invention will be omitted.

[0033] Before going into detail, in this specification, when an element is referred to as being "connected" or "coupled" to another element, it may be "directly" connected or coupled to the other element or with Other elements are connected or coupled to another element in an intervening manner unless it is referred to as being "directly connected to" or "directly coupled to" another element.

[0034] Although a singular form is used in this specification, it should be noted that a singular form may be used to represent a concept of a plural form unless it is contrary to the idea of ​​the present invention or otherwise clearly stated. ...

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PUM

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Abstract

The present invention relates to an output driving circuit and a transistor output circuit. In accordance with an embodiment of the present invention, an output driving circuit including: a first driving circuit unit driven according to on operation of a first switch to supply high voltage power source to a gate of an output transistor; a second driving circuit unit driven by a one-shot pulse generated according to on operation of a second switch, which operates complementarily with the first switch, to discharge a gate-source capacitance of the output transistor; and an output driving voltage clamping unit disposed between a high voltage power source terminal and the gate of the output transistor in parallel with the first driving circuit unit to maintain a gate potential of the output transistor discharged according to the on operation of the second switch is provided. Further, a transistor output circuit using the same is provided.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2011-0080760 filed on Aug. 12, 2011, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to an output driver circuit and a transistor output circuit, and more particularly, to a circuit capable of stably operating when a high voltage lower than a source-drain breakdown voltage but higher than a gate-source breakdown voltage is applied to the gate of an output transistor output drive circuit and transistor output circuit. Background technique [0004] The operating voltage of a p-channel transistor (for example, p-channel LDMOS) is determined by the source-drain breakdown voltage BVsd, the source-gate breakdown voltage BVsg, and the gate-drain breakdown voltage BVgd, and among them, the source-gate breakdown voltage The voltage BVsg is the lowest. The source-gate breakdown volta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/094
CPCH03K17/164G05F3/02
Inventor 许畅宰
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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