Semiconductor device and fabrication method thereof

Abstract

The invention provides a semiconductor device and a fabrication method thereof, and relates to the technical field of semiconductors. By introducing a second dielectric layer with a higher dielectricconstant between two pole plates forming a gate-source capacitor, the gate-source capacitance of the semiconductor device is improved, the problem that a drain-source capacitor of the semiconductor device is mismatched with drain-source capacitors of other semiconductor devices cascaded with the semiconductor device is solved, an external capacitor is not needed to be connected in parallel betweena source and a drain of the semiconductor device, the complexity of the circuit and the volume of the semiconductor device can be reduced, and the reliability of the semiconductor can be improved; and by introducing the high-dielectric constant material between the two pole plates forming the gate-source capacitor, the electrostatic resistant capability of the device can be improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] GaN (gallium nitride) semiconductor devices have significant advantages such as large band gap, high electron mobility, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, it is more suitable It has broad application prospects for making high-temperature, high-voltage, high-frequency and high-power electronic devices. [0003] In radio frequency microwave and high-voltage applications, enhanced semiconductor devices are essential, and high-voltage depletion-type AlGaN / GaN semiconductor devices and low-voltage enhanced silicon-metal-oxide-semiconductor field-effect transistors (Si-Metal-Oxide-Semiconductor Field) are often used -Effect Transistor, Si-MO...

AI Technical Summary

Problems solved by technology

Since the energy loss of avalanche breakdown and device turn-on is proportional to the operating frequency and the amount of mismatched charges, the high-voltage depletion-mode AlGaN / GaN semiconductor device in the enhancement mode cascode semiconductor device. Capacitance and capacitance mismatch between the source and drain of low-voltage enhancement-mode Si-MOSFET directly affect the high-frequency application of this enhancement-mode cascode semiconductor device, and the additional energy loss also increases the thermal power consumption of the device, Increase the junction temperature of the device and affect the performance of the device

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