Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, which relate to the technical field of semiconductors. By introducing a second dielectric layer with a higher dielectric constant between the two plates constituting the gate-source capacitance, the gate-source capacitance of the semiconductor device is increased, and the drain-source capacitance of the semiconductor device and the connection with the semiconductor device are solved. The problem of mutual mismatch between the drain-source capacitances of other semiconductor devices in cascaded devices does not require an external capacitor connected in parallel between the source and drain of the semiconductor device, which can reduce the complexity of the circuit and the volume of the semiconductor device, and can improve the performance of the semiconductor device. The reliability of the device can improve the electrostatic resistance of the device by introducing a high dielectric constant material between the two field plates that form the gate-source capacitance.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] GaN (gallium nitride) semiconductor devices have significant advantages such as large band gap, high electron mobility, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, it is more suitable It has broad application prospects for making high-temperature, high-voltage, high-frequency and high-power electronic devices. [0003] In radio frequency microwave and high-voltage applications, enhanced semiconductor devices are essential, and high-voltage depletion-type AlGaN / GaN semiconductor devices and low-voltage enhanced silicon-metal-oxide-semiconductor field-effect transistors (Si-Metal-Oxide-Semiconductor Field) are often used -Effect Transistor, Si-MO...

AI Technical Summary

Problems solved by technology

Since the energy loss of avalanche breakdown and device turn-on is proportional to the operating frequency and the amount of mismatched charges, the high-voltage depletion-mode AlGaN / GaN semiconductor device in the enhancement mode cascode semiconductor device. Capacitance and capacitance mismatch between the source and drain of low-voltage enhancement-mode Si-MOSFET directly affect the high-frequency application of this enhancement-mode cascode semiconductor device, and the additional energy loss also increases the thermal power consumption of the device, Increase the junction temperature of the device and affect the performance of the device

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