Highly efficient LED having current spread layer construction improved and manufacturing method thereof

Abstract

The invention discloses a highly-effective light-emitting diode with an improved current spreading layer structure and a production method thereof. Material which is extended on an N-GaAs under-layer comprises an n-GaAs buffer layer, or an AlAs / AlxGal-xAs or AlInP / (A1x Ga1-x)yIn1-yP Bragg reflection layer, an n-(AlxGa1-x)yIn1-yP lower limiting layer, an Undoped-(AlxGa1-x)yIn1-yP active region, a p-(A1xGa1-x)yIn1-yP upper limiting layer, and a p++AlxGal-xAs and p-GaP combined current spreading layer, wherein the p++AlxGal-xAs is arranged on the lower surface as a first current spreading layer, and the p-GaP is arranged on the upper surface as a second current spreading layer. The structure integrates the advantages of GaP and A1xGal-xAs materials, avoids the oxidization of materials, and guarantees the reliability and the stability of the current spreading and apparatuses.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a high-efficiency light-emitting diode with an improved current spreading layer structure and a manufacturing method thereof. technical background [0002] Light-emitting diodes (LEDs) have the advantages of small size, solidification, long life, and low power consumption, which are incomparable to other types of display devices. In recent years, LED has jumped to the absolute dominant position of semiconductor optoelectronic devices in terms of output and output value, which is more than the sum of other semiconductor materials. [0003] Aluminum gallium indium phosphide AlGaInP light-emitting diode LED has excellent performance in yellow-green, orange, orange-red, and red bands. It has broad application prospects in chemical engineering and other fields. Epitaxial AlGaInP materials on gallium arsenide GaAs substrates can obtain light-emitting diodes with color cov...

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Problems solved by technology

GaP material has good chemical stability, high electrical conductivity and full transparency to AlGaInP luminous wavelength. As a light-transmitting window, it can obtain high external quantum efficiency, but GaP material has a large lattice mismatch compared with AlGaInP material, reaching -3.6%, this mismatch leads to an increase in the network dislocation density formed at the interface, which is not conducive to the growth of GaP materials on AlGaInP materials, poor lattice quality at the interface, and low electron mobility, which not only affects the expansion of the current, but also It is easy to cause reliability and stability problems of the device

Al x Ga 1-x As the material of the current spreading layer, As material itself matches the lattice of AlGaInP material, can be heavily doped by P type and has high carrier mobility, but Al x Ga 1-x Since the As material contains aluminum components, the aluminum in the current spreading layer is easy to react with oxygen, water, etc. and deteriorate, which affects the reliability of the device.

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