Schottky diode with high reverse-blocking performance and manufacturing method thereof
A Schottky diode, high reverse technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of reverse leakage current saturation, reverse blocking characteristics, and reverse blocking characteristics. Softening and other problems, to achieve the effect of low forward voltage, reduced reverse leakage current, and increased reverse blocking voltage
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[0012] The patent application of the present invention discloses a Schottky diode with high reverse blocking performance, and its die structure is as follows: image 3 and Figure 4 As shown, its composition includes a heavily doped silicon substrate 5, epitaxially growing a lightly doped epitaxial layer 4 doped with P or AS as a drift region on the heavily doped silicon substrate 5, and implanting ions into the lightly doped epitaxial layer The P-type structure area made, and the upper and lower lead-out electric boards 1,6. The P-type structure region is composed of a P-type ring 3 and a P-type lattice 7 uniformly distributed in the epitaxial layer of the P-type ring 3, and the distance between the nearest adjacent P-type points of the P-type lattice is 5 In the range of -10um, the surface of the epitaxial layer in the P-type ring 3 has a metal layer 8 in Schottky barrier contact, the surface of the P-type structure region has an ohmic metal contact, and the outer edge of t...
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