Gallium-containing light-emitting semiconductor device and method of fabrication
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[0032] The present invention is believed to be best embodied in the LED shown completed in FIGS. 1 and 2 and in successive states of fabrication in FIGS. 3-8. Generally designated 1 in FIG. 1, the representative LED broadly comprises: [0033] 1. A light-generating semiconductor region 2 where light is produced and which is constituted of several layers in lamination to be set forth shortly. [0034] 2. An anode 3 of open-worked or meshed design on a first 15 of the pair of opposite major surfaces of the semiconductor region 2, the first major surface 15 being hereinafter referred to as the top surface of the semiconductor region. [0035] 3. An array of isolated ohmic contact regions 4, to which the present invention is specifically directed, on the other major surface 16, hereinafter referred to as the bottom surface, of the semiconductor region 2. [0036] 4. A reflective layer 5 covering the whole array of ohmic contact regions 4 as well as that part of the bottom surface of the semicon...
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