Multilevel structure titanium dioxide nanowire array and preparation method thereof

A technology of nanowire array and titanium dioxide, which is applied in the field of nanomaterials and can solve problems affecting applications

Active Publication Date: 2017-12-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of array density and nanowire size, the specific surface area and packing density of titanium dioxide single crystal nanowire arrays are much lower than that of titanium dioxide nanocrystalline thin films, which affects its application in electrochromic smart windows, electrochemical energy storage and dye-sensitivity. applications in solar cells and other fields

Method used

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  • Multilevel structure titanium dioxide nanowire array and preparation method thereof
  • Multilevel structure titanium dioxide nanowire array and preparation method thereof
  • Multilevel structure titanium dioxide nanowire array and preparation method thereof

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preparation example Construction

[0051] Preparation of TiO2 seed layer

[0052] The substrate is soaked in the solution containing the titanium source for a period of time. Titanium source can be titanium salt, titanate. In one example, the titanium source is TiCl 4 . The concentration of the titanium source in the solution containing the titanium source may be 0.01-0.10M. The temperature of the heat preservation may be 50-120°C (for example, 70°C). The heat preservation time can be 10-60 minutes. After dipping, the substrate is taken out and heat-treated, for example, placed in a tube furnace at 450-550° C. for 30-120 minutes to obtain a titanium dioxide seed layer. The titanium dioxide seed layer may have a thickness of about 5-30 nm.

[0053] Hydrothermal Synthesis of TiO Single Crystal Nanowire Arrays

[0054] The substrate formed with the titanium dioxide seed crystal layer is placed in a hydrothermal precursor solution for hydrothermal reaction to attach a titanium dioxide single crystal nanowire...

Embodiment 1

[0069] (1) The FTO transparent conductive glass was ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then dried in an oven at 60°C for 2 hours.

[0070] (2) Dip the cleaned FTO transparent conductive glass in 0.06M TiCl 4 , heated in a water bath to 70°C for 30 minutes, took it out and placed it in a tube furnace for heat treatment at 450°C for 30 minutes to obtain a titanium dioxide seed layer.

[0071] (3) 15 mL of deionized water, 15 mL of concentrated hydrochloric acid (38% by mass) and 0.375 mL of tetrabutyl titanate were measured respectively, and magnetically stirred for 15 minutes.

[0072] (4) Take the FTO transparent conductive glass containing the titanium dioxide seed layer and place it obliquely in a 50mL polytetrafluoroethylene digestion tank so that the transparent conductive layer is placed downward. Then the precursor solution in step (3) is transferred into a polytetrafluoroethylene digestion tank. Move the polytetrafluoroeth...

Embodiment 2

[0076] (1) The FTO transparent conductive glass was ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then dried in an oven at 60°C for 2 hours.

[0077] (2) Dip the cleaned FTO transparent conductive glass in 0.06M TiCl 4 , heated in a water bath to 70°C for 30 minutes, took it out and placed it in a tube furnace for heat treatment at 450°C for 30 minutes to obtain a titanium dioxide seed layer.

[0078] (3) 15 mL of deionized water, 15 mL of concentrated hydrochloric acid (38% by mass) and 0.375 mL of tetrabutyl titanate were measured respectively, and magnetically stirred for 15 minutes.

[0079] (4) Take the FTO transparent conductive glass containing the titanium dioxide seed layer and place it obliquely in a 50mL polytetrafluoroethylene digestion tank so that the transparent conductive layer is placed downward. Then the precursor solution in step (3) is transferred into a polytetrafluoroethylene digestion tank. Move the polytetrafluoroe...

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Abstract

The invention provides a multilevel structure titanium dioxide nanowire array and a preparation method thereof. The multilevel structure titanium dioxide nanowire array is an array consisting of titanium dioxide nanowires; and the titanium dioxide nanowires are of multilevel structures and comprise titanium dioxide monocrystal nanowires and titanium dioxide nanoparticles coating the surfaces of the titanium dioxide monocrystal nanowires. The surfaces of the titanium dioxide monocrystal nanowires are coated with the titanium dioxide nanoparticles, and the formed array is of high specific surface area and packing density, so that the electrochromism performance, capacitive performance, photoelectric property and the like of the array can be improved.

Description

technical field [0001] The invention relates to a titanium dioxide nanowire array with a multilevel structure and a preparation method thereof, belonging to the technical field of nanometer materials. Specifically, titanium dioxide single crystal nanowires are coated with titanium dioxide nanoparticles to increase the packing density and specific surface area of ​​titanium dioxide single crystal nanowire arrays, so as to realize applications in the fields of electrochromism, electrochemical energy storage and solar cells. The preparation method can control the thickness and size distribution of titanium dioxide single crystal nanowires and titanium dioxide nanoparticles; at the same time, the method has the characteristics of stable and reliable process, simple operation and low cost, and is easy to popularize and apply. Background technique [0002] With the increasing energy crisis and global warming, energy conservation and emission reduction have become the focus of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G23/047C01G23/053B82Y40/00H01G9/20H01G11/46
CPCC01G23/047C01G23/053C01P2004/03C01P2004/04C01P2006/40H01G9/2031H01G11/46Y02E10/542
Inventor 李效民陈永博徐小科高相东毕志杰何晓利
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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