Silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof

A quantum dot light-emitting, silver nanowire technology, applied in circuits, electrical components, electro-solid devices, etc., can solve the problems that limit the improvement of the luminous efficiency of flexible QLEDs, the loss of light-emitting devices, etc., to ensure the ability of electronic transmission, low cost, obvious effect

Inactive Publication Date: 2018-09-28
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] Drawing lessons from other light-emitting diodes, such as organic light-emitting diodes, people's research on the light extraction structure of devices, researchers generally use photonic crystals, optical grids and other structures that require complex and fine technology to solve the problem of light loss in light-emitting devices. problem, which limits the improvement of flexible QLED luminous efficiency to a certain extent

Method used

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  • Silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof
  • Silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof
  • Silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof

Examples

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preparation example Construction

[0066] In general, the preparation method may include the following steps:

[0067] (1) Preparation of flexible and transparent composite PI / AgNWs electrodes. Specifically, it can be as follows: firstly, AgNWs network structure is formed on the glass substrate by squeegee coating, and annealed; secondly, a PI film is formed on the network structure by squeegee coating or spin coating, and cured at high temperature; finally, the PI film is removed from the Peel off on the glass substrate;

[0068] (2) The electron transport layer is prepared by spin coating on the flexible transparent composite electrode. While ensuring that the electron transport layer can well modify the surface of PI / AgNWs and reduce its surface roughness, it can also carry out electron transport well. The electron transport layer Including but not limited to zinc oxide nanoparticle electron transport layer, annealing;

[0069] (3) Spin coating on the zinc oxide film (ie zinc oxide nanoparticle film) to pr...

Embodiment 1

[0081] The device structure of the flexible red QLED in Example 1 is that the PI / AgNWs flexible transparent composite electrode is used as the transparent cathode, the zinc oxide nanoparticles are used as the electron transport layer, and the cadmium selenide / cadmium sulfide / zinc sulfide red light quantum dots are used as the light-emitting layer. The organic small molecule 4,4'-bis(9-carbazolyl)biphenyl (ie, CBP) is used as the hole transport layer, the inorganic metal oxidized molybdenum trioxide is used as the hole injection layer, and the metal aluminum is used as the anode. Nano-zinc oxide is a semiconductor material, and its electron transport ability decreases with the increase of thickness. The commonly used thickness is generally between 50-100nm. Considering that the surface of PI / AgNWs needs nano-zinc oxide for filling and modification, the following examples The minimum thickness of zinc oxide is 80nm, and the maximum thickness is 100nm.

[0082] The preparation pr...

Embodiment 2

[0085] In Example 2, a comparative device was prepared using the same device structure as in Example 1 except for the flexible transparent composite electrode PI / AgNWs. The electrode used in this structure was a glass / ITO transparent bottom electrode as a cathode.

[0086] The preparation process of the device is as follows: glass / ITO is cleaned with ultrasonic waves in cleaning agent and deionized water for 30 minutes, and then dried at 105°C for 2 hours. Spin-coat zinc oxide nanoparticle film on the glass / ITO electrode with a thickness of 100nm and anneal at 150°C for 20 minutes; spin-coat a quantum dot light-emitting layer on the zinc oxide film with a thickness of 10nm and anneal at 100°C for 2 minutes; transfer the device into In the evaporation chamber of the evaporation equipment, 60nm organic small molecule 4,4'-bis(9-carbazolyl)biphenyl, 10nm inorganic metal oxide molybdenum trioxide and 100nm metal anode aluminum were respectively evaporated.

[0087] ITO is used as ...

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Abstract

The invention discloses a silver nanowire electrode-based efficient flexible quantum dot light-emitting diode and preparation thereof. The silver nanowire transparent electrode-based flexible quantumdot light-emitting diode is characterized by comprising a flexible transparent cathode, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, a hole injection layerand a metal anode from bottom to top, wherein the flexible transparent cathode is a composite electrode formed by embedding silver nanowires into a flexible substrate. According to the silver nanowireelectrode-based efficient flexible quantum dot light-emitting diode, the smooth surface of a nano zinc oxide layer is obtained through improving the key parameters and conditions of a corresponding device preparation process and modifying the surface of the electrode by using nano zinc oxide, so that the electron transport property of the nano zinc oxide is ensured, the effect, of enhancing the light extraction efficiency of the flexible quantum dot light-emitting diode, of the silver nanowire flexible transparent electrode is brought into fully play, and the light-emitting efficiency of theflexible quantum dot light-emitting diode is effectively improved to the world leading level.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diodes, and more specifically relates to a high-efficiency flexible quantum dot light-emitting diode based on silver nanowire electrodes and a preparation method thereof. It is a highly efficient flexible quantum dot light-emitting diode. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have been discovered since 1994 (V.L.Colvin, M.C.Schlamp, A.P. Alivisatos. Light-Emitting Diodes Made from Cadmium Selenide Nanocrystals and a Semiconductor Polymer. Nature 1994, 370 (6488), 354-357), in In the past 30 years so far, it has received great attention and extensive research. The external quantum efficiency of QLED has developed from less than 0.01% at the beginning to nearly 21% (Xingliang Dai, Zhenxing Zhang, Yizheng Jin, Yuan Niu, Hujia Cao, XiaoyongLiang, Liwei Chen, Jianpu Wang, Xiaogang Peng. Solution-Processed, High- Performance Light-Emitting Diodes Based on Qua...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H10K50/00H10K71/00
Inventor 王磊丁可方云生胡彬
Owner HUAZHONG UNIV OF SCI & TECH
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