Preparation method of high-purity boron trichloride-11

A technology of high-purity boron trichloride and boron trichloride, which is applied in the field of preparation of high-purity boron trichloride-11, can solve the problems of semiconductor device performance impact, machine crash, and impact on the operating speed of electronic equipment, and achieve Improve the anti-interference and anti-radiation performance, the effect of high purity

Active Publication Date: 2014-07-30
方治文
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When natural boron compounds are used as doping sources in the semiconductor device manufacturing process, they need to be separated by a separator to separate the 11B component, and then doped, but since natural boron contains 19.78% of 10B isotope, so it is inevitable to introduce 10B for doping together. As a result, in some specific environments, it will have a fatal impact on the performance of semiconductor devices, and at least affect the operating speed of electronic equipment , it will lead to crash or even crash
[0004] With the increasing integration of integrated circuits, and many special applications such as aerospace, space probes, modern military, supercomputers, cloud computing, high-speed trains The requirements for the speed, stability, reliability, and safety of electronic equipment, such as communications, networks, etc., are constantly improving, and the performance requirements for semiconductor devices, the core devices of manufacturing-related facilities, are also getting higher and higher. Certain key semiconductor process-related materials It is not limited to the purity requirements in the general sense, but has risen to the concept of isotopic purity. Conventional natural materials can no longer meet the requirements of technological progress.

Method used

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  • Preparation method of high-purity boron trichloride-11

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preparation example Construction

[0035] A preparation method of high-purity boron trichloride-11, comprising the following steps:

[0036] (i) Preprocessing

[0037] Add the aluminum chloride in the feeder 3 into the reactor 4 through the hopper, heat the reactor 4 to 90°C~100°C after passing the leak test, and feed high-purity nitrogen into the reactor 4 to replace the air therein until The water content of the discharged nitrogen is less than 1ppm;

[0038] (ii) Reaction of aluminum chloride and boron trifluoride-11 to synthesize boron trichloride-11

[0039] Pass the high-abundance boron trifluoride-11 in the raw material storage tank 1 into the reactor 4 to react with the pretreated aluminum chloride, the reaction temperature is 100-300°C, the reaction pressure is 0.05-2.0MPa, and after the reaction, Boron trichloride-11 crude product, including unreacted boron trifluoride-11 and hydrogen fluoride, hydrogen chloride, air impurities and entrained aluminum chloride and aluminum fluoride particles in the b...

Embodiment 1

[0055] (i) Preprocessing

[0056] Add the aluminum chloride in the feeder 3 into the reactor 4 through the hopper, heat the reactor 4 to 90°C after the leak test is qualified, and feed high-purity nitrogen into the reactor 4 to replace the air until the content of the discharged nitrogen is The amount of water is less than 1ppm;

[0057] (ii) Reaction of aluminum chloride and boron trifluoride-11 to synthesize boron trichloride-11

[0058]Pass the high-abundance boron trifluoride-11 in the raw material storage tank 1 into the reactor 4 to react with the pretreated aluminum chloride, the reaction temperature is 100°C, the reaction pressure is 0.05MPa, and boron trichloride is obtained after the reaction -11 crude product, including unreacted boron trifluoride-11 and hydrogen fluoride, hydrogen chloride, air impurities and entrained aluminum chloride and aluminum fluoride particles in the boron trichloride-11 crude product;

[0059] (iii) Filtration

[0060] The boron trichlo...

Embodiment 2

[0071] (i) Preprocessing

[0072] Add the aluminum chloride in the feeder 3 to the reactor 4 through the hopper, heat the reactor 4 to 95°C after the leak test is qualified, and feed high-purity nitrogen into the reactor 4 to replace the air until the discharged nitrogen contains The amount of water is less than 1ppm;

[0073] (ii) Reaction of aluminum chloride and boron trifluoride-11 to synthesize boron trichloride-11

[0074] Pass the high-abundance boron trifluoride-11 in the raw material storage tank 1 into the reactor 4 to react with the pretreated aluminum chloride, the reaction temperature is 150°C, the reaction pressure is 0.5MPa, and boron trichloride is obtained after the reaction -11 crude product, including unreacted boron trifluoride-11 and hydrogen fluoride, hydrogen chloride, air impurities and entrained aluminum chloride and aluminum fluoride particles in the boron trichloride-11 crude product;

[0075] The reaction formula is as follows:

[0076] AlCl 3 +...

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Abstract

The invention discloses a preparation method of high-purity boron trichloride-11, and belongs to the field of preparation methods of boron compounds. The preparation method comprises the steps such as pretreating raw materials, synthesizing boron trichloride-11 through reaction of aluminum chloride and boron trifluoride-11, filtering, preliminarily separating, rectifying and purifying, collecting the high-purity boron trichloride-11 product, treating tail gas, and the like. The high-purity boron trichloride-11 prepared by the preparation method disclosed by the invention is high in purity which can reach over 99.9999%, can satisfy requirements of manufacturing integrated circuit semiconductor apparatuses on a large scale, effectively improves interference resistance and radiation resistance of an integrated circuit, and can be used as the raw material for manufacturing raw materials such as a high-purity boron-11 isotope material, a special boron fiber material and light-guide fiber.

Description

technical field [0001] The invention belongs to a preparation method of boron halides, in particular to a preparation method of high-purity boron trichloride-11. Background technique [0002] As a special boron compound, boron trichloride is widely used in VLSI semiconductor device manufacturing, organic synthesis, elemental boron manufacturing, boron fiber manufacturing and synthesis of other organic boron compounds. The boron element in boron trichloride sold on the market is natural boron, which consists of two stable isotopes 10 B and 11 B consists of 10 B abundance is 19.78%, 11 The abundance of B is 80.22%. [0003] 10 B has a strong ability to absorb neutrons, and is used as a neutron moderator in nuclear reactors to control the operation of the reactor. and 11 B, on the contrary, hardly absorbs neutrons, so it is used as a boron dopant in the manufacturing process of semiconductor devices, which can effectively improve the conductivity and anti-radiation and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B35/06
Inventor 方治文
Owner 方治文
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