Preparation method of high-purity boron trichloride-11

Abstract

The invention discloses a preparation method of high-purity boron trichloride-11, and belongs to the field of preparation methods of boron compounds. The preparation method comprises the steps such as pretreating raw materials, synthesizing boron trichloride-11 through reaction of aluminum chloride and boron trifluoride-11, filtering, preliminarily separating, rectifying and purifying, collecting the high-purity boron trichloride-11 product, treating tail gas, and the like. The high-purity boron trichloride-11 prepared by the preparation method disclosed by the invention is high in purity which can reach over 99.9999%, can satisfy requirements of manufacturing integrated circuit semiconductor apparatuses on a large scale, effectively improves interference resistance and radiation resistance of an integrated circuit, and can be used as the raw material for manufacturing raw materials such as a high-purity boron-11 isotope material, a special boron fiber material and light-guide fiber.

Description

technical field [0001] The invention belongs to a preparation method of boron halides, in particular to a preparation method of high-purity boron trichloride-11. Background technique [0002] As a special boron compound, boron trichloride is widely used in VLSI semiconductor device manufacturing, organic synthesis, elemental boron manufacturing, boron fiber manufacturing and synthesis of other organic boron compounds. The boron element in boron trichloride sold on the market is natural boron, which consists of two stable isotopes 10 B and 11 B consists of 10 B abundance is 19.78%, 11 The abundance of B is 80.22%. [0003] 10 B has a strong ability to absorb neutrons, and is used as a neutron moderator in nuclear reactors to control the operation of the reactor. and 11 B, on the contrary, hardly absorbs neutrons, so it is used as a boron dopant in the manufacturing process of semiconductor devices, which can effectively improve the conductivity and anti-radiation and a...

AI Technical Summary

Problems solved by technology

When natural boron compounds are used as doping sources in the semiconductor device manufacturing process, they need to be separated by a separator to separate the 11B component, and then doped, but since natural boron contains 19.78% of 10B isotope, so it is inevitable to introduce 10B for doping together. As a result, in some specific environments, it will have a fatal impact on the performance of semiconductor devices, and at least affect the operating speed of electronic equipment , it will lead to crash or even crash

[0004] With the increasing integration of integrated circuits, and many special applications such as aerospace, space probes, modern military, supercomputers, cloud computing, high-speed trains The requirements for the speed, stability, reliability, and safety of electronic equipment, such as communications, networks, etc., are constantly improving, and the performance requirements for semiconductor devices, the core devices of manufacturing-related facilities, are also getting higher and higher. Certain key semiconductor process-related materials It is not limited to the purity requirements in the general sense, but has risen to the concept of isotopic purity. Conventional natural materials can no longer meet the requirements of technological progress.

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