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Preparation method of homogenized boron nitride coating

A boron nitride and homogenization technology, which is applied in coating, metal material coating process, gaseous chemical plating, etc.

Inactive Publication Date: 2016-02-03
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]This method optimizes the commonly used chemical vapor deposition method. By mixing first and then depositing, it solves the problem of uneven boron nitride coating and obtains relatively uniform , boron nitride coating with single composition and good crystallization properties

Method used

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  • Preparation method of homogenized boron nitride coating
  • Preparation method of homogenized boron nitride coating
  • Preparation method of homogenized boron nitride coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The first step: install the furnace, place the silicon carbide fiber in the deposition area, the mixing chamber and the reaction chamber are in the constant temperature area of ​​the furnace tube at the same time, and check the air tightness of the system by vacuuming.

[0019] Step 2: Evacuate and heat up, introduce high-purity nitrogen, vacuumize, and cycle like this five times to remove residual air in the system, and heat up according to the set program.

[0020] Step 3: Intake air, heat up to the set deposition temperature of 800°C, maintain the system pressure at 20mbar, feed ammonia gas 60ml / min from inlet 1, and feed high-purity nitrogen 100mlmin and boron trichloride 20ml into inlet 2 / min.

[0021] The fourth step: mixed deposition, the gas enters the constant temperature zone, first mixed in the mixing chamber, and then enters the deposition zone to deposit boron nitride on the surface of the silicon carbide fiber for 2 hours.

[0022] The fifth step: heat t...

Embodiment 2

[0025] The first step: install the furnace, place the cleaned graphite plate in the deposition area, the mixing chamber and the reaction chamber are in the constant temperature area of ​​the furnace tube at the same time, and check the air tightness of the system by vacuuming.

[0026] Step 2: Evacuate and heat up, introduce high-purity nitrogen, vacuumize, and cycle like this five times to remove residual air in the system, and heat up according to the set program.

[0027] Step 3: Intake air, heat up to the set deposition temperature of 1300°C, maintain the system pressure at 20mbar, feed ammonia gas 60ml / min from inlet 1, and feed high-purity nitrogen 100mlmin and boron trichloride 20ml into inlet 2 / min.

[0028] The fourth step: mixed deposition, the gas enters the constant temperature zone, first mixed in the mixing chamber, and then enters the deposition zone to deposit boron nitride on the surface of the graphite plate for 5 hours.

[0029] The fifth step: heat treatm...

Embodiment 3

[0031] The first step: install the furnace, place the needle-punched carbon felt in the deposition area, the mixing chamber and the reaction chamber are in the constant temperature area of ​​the furnace tube at the same time, and check the air tightness of the system by vacuuming.

[0032] Step 2: Evacuate and heat up, introduce high-purity nitrogen, vacuumize, and cycle like this five times to remove residual air in the system, and heat up according to the set program.

[0033] Step 3: Intake air, heat up to the set deposition temperature of 750°C, maintain the system pressure at 20mbar, feed ammonia 60ml / min and hydrogen 100ml / min from inlet 1, and feed high-purity nitrogen 100ml / min and Boron trifluoride 20ml / min.

[0034] The fourth step: mixed deposition, the gas enters the constant temperature zone, first mixed in the mixing chamber, and then enters the deposition zone to deposit boron nitride on the surface of the needle felt for 0.5h.

[0035] The fifth step: heat tre...

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Abstract

The invention relates to a preparation method of a homogenized boron nitride coating. According to the method, boron trichloride (BCl<3>) and ammonia gas (NH<3>) serve as reaction gases and are fed into a reactor, firstly the reaction gases are evenly mixed in a mixing region and then generate surface deposition in a deposition reaction region, finally an obtained sample is subjected to high-temperature heat treatment, and through a scanning tunneling microscope (SEM), Fourier transform infraRed (FT-IR) and X-ray diffraction (XRD) detection, the boron nitride coating which is even in thickness, singular in ingredient and high in degree of crystallinity is obtained. The method can be used for preparing a boron nitride interface in composite and for preparing boron nitride coatings on the surfaces of other samples and can be further used for researching the boron nitride vapor deposition process and mechanism. The method mainly solves the problem that gases are not evenly mixed in the two-component chemical gas phase sedimentary boron nitride process, so that the uniformity of the boron nitride coating is improved, and the coating thickness is better controlled.

Description

technical field [0001] The invention relates to a method for preparing a homogenized boron nitride coating by chemical vapor deposition technology, in particular to the preparation of a boron nitride interface in fibers, fiber braids and composite materials. Background technique [0002] The boron nitride interface can be generated in situ during the preparation of the composite material, or the interface can be prepared on the surface of the fiber first, and then the fiber with the boron nitride interface can be applied to the composite material as a reinforcing fiber, and what method is used to prepare it , which depends on the control of production process conditions and the limitations of production equipment. At present, there are many methods for preparing BN interfaces, mainly including liquid phase method (also known as dipping-coating method), chemical vapor deposition method and carbothermal reduction method. Among many preparation methods, the interface propertie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34
Inventor 李爱军李琳琳彭雨晴白瑞成吴彪贾林涛汤哲鹏
Owner SHANGHAI UNIV
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