Purification method for boron trichloride

A technology of boron trichloride and purification method, which is applied in the direction of boron halide compounds, etc., and can solve problems such as difficulty in meeting purification requirements

Inactive Publication Date: 2014-10-15
大连科利德半导体材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to meet the index requirements, there is also a choice to use a rectification tower for rectification and purification, but because chlorine gas has a certain solubility in boron trichloride, it is difficult to meet the purification requirements simply by rectification and purification

Method used

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  • Purification method for boron trichloride
  • Purification method for boron trichloride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Heat the boron trichloride raw material steel cylinder 2 with a heating belt 1 at 35°C to between 25°C and 35°C to fully vaporize boron trichloride, control the flow rate of boron trichloride gas to 10L / min, pass through a diameter of 5cm, and a height of 50cm, boron carbide reaction layer 3 with a temperature of 850°C, the gas after the reaction is cooled by a -20°C low temperature box 5, and collected in a product bottle 4.

[0013] The chlorine content comparison before and after purification is as follows:

[0014]

Embodiment 2

[0016] Operating condition is the same as embodiment 1, and chlorine content before and after purification contrasts as follows:

[0017]

Embodiment 3

[0019] Operating condition is the same as embodiment 1, and chlorine content before and after purification contrasts as follows:

[0020]

[0021] In the above example, although the chlorine content in the boron trichloride before purification is different (increased by an order of magnitude), after passing through the boron carbide reaction layer under the same conditions, the chlorine impurity content can be reduced to below 1ppm, which fully proves the effectiveness of the present invention. sex.

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Abstract

The invention belongs to the technical field of chemical engineering and relates to a purification method for boron trichlorid. The purification method comprises the following steps: a heating tape at the temperature of 35 DEG C is adopted to heat a boron trichloride raw material steel bottle and the temperature is controlled at 25 DEG C- 35 DEG C; boron trichloride raw materials with chlorine gas content greater than 1 ppm are heated and fully vaporized and the gas flow rate of the boron trichloride is controlled at 10 L / min; micro-scale chlorine gas contained in the boron trichloride gas and boron carbide chlorine gas react with boron carbide at high-temperature through a boron carbide reaction layer which is 5 cm in diameter, 50 cm in height and 850 DEG C in temperature; after the reaction, the gas is cooled by a cryogenic box at the temperature of -20 DEG C and collected into product bottles. The purification method has the benefits that as the high-temperature boron carbide reaction layer is adopted by the technology, the raw materials and the boron carbide are subjected to deep contact reaction to enable the chlorine gas impurity content in the boron trichloride is reduced to less than 1 ppm.

Description

technical field [0001] The invention belongs to the technical field of chemical industry, in particular to a method for purifying boron trichloride. Background technique [0002] Since chlorine gas is used in the production process of boron trichloride for reaction, boron trichloride products often contain trace amounts of chlorine gas. In the practical application of electronic grade high-purity boron trichloride, chlorine gas is a harmful impurity, and the requirement for chlorine gas content is generally less than 1ppm. In order to meet the index requirements, there is also a choice to use a rectification tower for rectification and purification. However, because chlorine gas has a certain solubility in boron trichloride, it is difficult to meet the purification requirements simply by rectification and purification. Contents of the invention [0003] In view of the defects in the prior art, the purpose of the present invention is to provide a process for removing tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B35/06
Inventor 赵毅计燕秋裴凯刘颖毕聪智
Owner 大连科利德半导体材料股份有限公司
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