9results about How to "Prevent redeposition" patented technology

The invention relates to an environment-friendly process method for improving the surface metal cleaning efficiency of a silicon wafer, and belongs to the technical field of semiconductor silicon wafer processing, and the process method comprises the following operation steps: S1, pre-cleaning and activation: placing the silicon wafer in a first cleaning tank, introducing ozone into ultrapure water, and processing in cooperation with low-frequency ultrasound; and S2, main cleaning and complexing: placing the silicon wafer subjected to pre-cleaning and activating treatment in a second cleaning tank, and treating the silicon wafer in a dilute citric acid solution in cooperation with high-frequency ultrasound. And S3, overflow rinsing: placing the silicon wafer subjected to main cleaning and complexing treatment in a third cleaning tank. And S4, drying: carrying out drying treatment on the silicon wafer subjected to the overflow rinsing treatment. Through the synergistic effect of physical stripping, chemical oxidation and complexing dissolution, under the condition that highly toxic chemicals such as hydrofluoric acid are not used, the cleanliness of metal on the surface of the silicon wafer reaches the ppt level, and the problems that traditional RCA cleaning is serious in environmental pollution and high in operation risk are effectively solved.

The invention discloses a TC cavity automatic cleaning system, and relates to the technical field of semiconductor manufacturing, the TC cavity automatic cleaning system comprises a cavity, a vacuum hand disc is installed in the cavity, the automatic cleaning system further comprises a second air inlet branch pipe, the two ends of the bottom of the second air inlet branch pipe penetrate through the top of the cavity and extend into the cavity, and the second air inlet branch pipe is arranged in the cavity. The two ends of the bottom of the second air inlet branch pipe fixedly communicate with the same annular air inlet pipe, and the bottom of the annular air inlet pipe fixedly communicates with a plurality of first air spraying heads. According to the invention, through a simple structure, automatic cleaning in the cavity is realized, manual cavity opening is not needed, the downtime is obviously reduced, contamination particles of a vacuum hand disc are prevented from being adhered to a wafer to cause chip scrapping, the production continuity and efficiency are improved, the production cost is reduced, the production efficiency is improved, the production cost is reduced, and the production cost is reduced. The manual intervention requirement is reduced, precise cleaning is ensured through the adjusting assembly, pollutants are rapidly removed through the exhaust assembly, and cleaning parameters can be optimized through the valve.

A semiconductor cleaning method comprises the steps that S1, a semiconductor substrate is provided, and the surface of the semiconductor substrate is provided with first pollutants left after film removal; s2, an electret device is adopted to preprocess the semiconductor substrate, and first pollutants are removed; s3, performing wet cleaning on the semiconductor substrate through an RCA standard cleaning method; and S4, drying the semiconductor substrate. The electrostatic adsorption principle that the electrets store charges for a long time is utilized, pollutants left after film removal of the surface of the semiconductor substrate are removed, then wet cleaning is carried out through the RCA standard cleaning method, the cleanliness of the surface of the wafer is improved, use of chemicals is reduced, the production cost is reduced, and the product yield is improved.

The utility model relates to a kind of descaling devices, including mainframe box, processing pipeline is located in mainframe box and multiple groups are arranged in parallel, first closed chamber and second closed chamber are arranged at the both ends of mainframe box, the both ends of processing pipeline are communicated with first closed chamber and second closed chamber respectively, first closed chamber and second closed chamber are communicated with one end of descaling pipeline, the other end of descaling pipeline is communicated with medicament storage tank, medicament storage tank imports descaling reagent by pump, pump circulates reagent along first closed chamber, second closed chamber and processing pipeline, by high efficiency, the scale layer of these parts is removed, avoid the case that water passage flow is small, ensure the entire water system's unobstructed, maintain the purification efficiency of purification mainframe to cooling circulating water, ensure that equipment can be stably and efficiently operated, reduce the risk that equipment efficiency is reduced due to scale layer accumulation, reduce the maintenance cost and energy consumption cost of enterprise.

The present application relates to a kind of oxygen plasma cleaning method and system for removing cavity ion contaminants in situ.The method first controls the pressure in the cavity below 300 mTorr, and oxygen is introduced into the cavity;Radio frequency is applied to the cavity to ionize oxygen into oxygen ions and high-energy electrons;Oxygen ions and metal ions undergo physical sputtering, causing metal ions to desorb from the surface of the cavity, while high-energy electrons and metal ions undergo neutralization reactions;Finally, the characteristic peaks of metal ions in the cavity are monitored in real time using optical emission spectroscopy, and the cleaning is completed using feedback regulation until the characteristic peaks of metal ions meet the preset conditions.Compared with the prior art, the present application has the advantages of good cleaning effect, high efficiency, environmental protection, stability and the like.

The utility model discloses a device for reducing friction scratch of a reworked piece, which comprises a first conveyor belt, a second conveyor belt arranged on one side of the first conveyor belt, a support frame arranged above the second conveyor belt, a mounting plate connected with the support frame through an electric telescopic rod, a nozzle arranged below the mounting plate, and a connecting pipe connected with the nozzle through an air ejector pipe. According to the rework piece conveying device, the rework pieces are placed on the second conveying belt to be conveyed, and surface scratching caused by collision or friction in the conveying process can be effectively avoided. The design not only protects the surface quality of the reworked piece, but also improves the safety and stability of the transmission process. In addition, a nozzle and a dust hood are arranged above the second conveyor belt, and the devices can clean the reworked piece in real time.

The invention belongs to the technical field of flushing fluid for an electric automobile cooling system, and particularly relates to low-conductivity flushing fluid for the electric automobile cooling system as well as a preparation method and application of the low-conductivity flushing fluid. The flushing fluid is prepared from the following components in parts by mass: 74.04 to 79.88 percent of deionized water, 20 to 25 percent of an alcohol solvent, 0.05 to 0.30 percent of a nonionic surfactant, 0.05 to 0.40 percent of a chelating agent, 0.005 to 0.05 percent of an anticorrosive agent, 0.001 to 0.02 percent of a silicon-based defoaming agent and 0.01 to 0.20 percent of a buffering agent, and the silicon-based defoaming agent exists in the form of a nano dispersion. The invention relates to a nanotechnology low-conductivity flushing fluid which is based on an ethylene glycol solvent system with the same polarity as a cooling liquid and has the advantages of cleaning power, low conductivity, corrosion resistance and foam inhibition.

This invention relates to the field of detergent technology, specifically disclosing a highly active detergent composition containing succinic anhydride and its preparation method. The invention prepares the highly active detergent composition by hydrolyzing a small amount of alkenyl succinic anhydride to obtain succinic acid. The invention also provides a lignin-based surfactant to work in conjunction with the composition, effectively preventing the redeposition of dirt washed off the fabric, thus ensuring washing performance. The composition prepared by this invention can prevent the aggregation and precipitation of dirt particles during washing, ensuring the formula remains stable and does not separate throughout its shelf life and during washing, while improving detergency.

The application relates to an anti-redeposition cleaning agent for photoresist after dry etching and a preparation method and application thereof, wherein the anti-redeposition cleaning agent for photoresist after dry etching comprises the following components according to weight parts: 0.5-5 parts of a hydroxyl derivative; 5-20 parts of an organic base; 0.2-5 parts of a sulfonating agent; 50-70 parts of an organic solvent; 0.1-1 part of an azole corrosion inhibitor; and 30-50 parts of ultrapure water. The hydroxyl derivative is innovatively introduced into the formula, a swelling channel is forcibly opened by using the rigid structure of the hydroxyl derivative, and the alkaline active ingredient can penetrate into the interior, so that the photoresist is disintegrated from the interior.