Plasma etching method and plasma treatment apparatus

Abstract

To realize reduction in size and low cost of a matching circuit in the double-frequency superimposing and impressing system. In this plasma etching apparatus, an upper electrode 18 is connected (grounded) to the ground potential via a chamber 10, while a lower electrode 16 is electrically connected to a first radio frequency power source 40 (for example, 13.56 MHz) and a second radio frequency power source 42 (for example, 3.2 MHz) via a first matching unit 36 and a second matching unit 38. The second matching unit 38 in the lower frequency side is formed of a T-type circuit in which a coil 62 is provided in the final output stage and the coil 62 is also operated as a high-cut filter for shielding the radio frequency (13.56 MHz) from the first radio frequency power source 40.

Description

technical field

[0001] The present invention relates to a plasma process, in particular to a plasma etching method and a plasma processing device in a parallel plate type RIE mode. Background technique

[0002] Etching processing in the manufacturing process of semiconductor devices and FPD (Flat Panel Display) has been widely used in parallel plate type plasma etching apparatuses from the past to the present. Parallel plate type plasma etching equipment arranges the upper electrode and the lower electrode in parallel in the processing container or reaction chamber, mounts the processed substrate (semiconductor wafer, glass substrate, etc.) on the lower electrode, and applies high-frequency voltage to the lower part through the matching On at least one of the electrode and the upper electrode. The electric field formed between the two electrodes by the high-frequency voltage accelerates the electrons, and plasma is generated by the impact ionization of the electrons and the...

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