Plasma etching method and plasma treatment apparatus

A plasma and etching device technology, which is applied in the field of plasma technology, can solve the problems of low plasma density distribution uniformity and etching uniformity, unable to obtain etching rate, and RF power increase, etc., and achieves good etching ability and etching. The effect of increased rate, improved uniformity

Active Publication Date: 2005-02-16
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the RF power is increased, there is a problem that the plasma is concentrated near the center of the substrate, and the uniformity of the plasma density distribution and the uniformity of etching

Method used

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  • Plasma etching method and plasma treatment apparatus
  • Plasma etching method and plasma treatment apparatus
  • Plasma etching method and plasma treatment apparatus

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0049] [Example 1]

[0050] Using the plasma etching apparatus of Fig. 1, the source in the etching of aluminum (Al) is used with high-frequency RF s (13.56MHz) power Ps and high frequency RF for bias b (3.2 MHz) power Pb was used as a parameter to evaluate the uniformity of the plasma density distribution.

[0051]In a multilayer wiring structure in which aluminum wiring is provided, it is desirable to perform tapered etching on the lower layer, especially on the aluminum wiring on the lowermost layer, in order to facilitate embedding of the insulating film. In the aluminum and tapered etching of FPD, in order to achieve anisotropic etching, it is desired to reduce the pressure and increase the high-frequency RF for the source s The power of Ps.

[0052] However, as shown in Comparative Examples 1, 2, and 3 in Fig. 4 to Fig. b while using only the source with high frequency RF s In the single-frequency application method, the higher the RF s The lower the pressure in th...

Example Embodiment

[0056] [Example 2]

[0057] Using the plasma etching apparatus shown in Fig. 1, in the etching of aluminum neodymium (AlNd), which is a kind of aluminum alloy, high-frequency RF b (3.2MHz) power Pb is used as a parameter to evaluate the size of the etching rate. As other main etching conditions, the gap between electrodes (GAP) is set at 140 mm, chlorine gas Cl 2 (Flow rate 300sccm) as etching gas, the pressure in the chamber is set at 5mTorr, the temperature (upper electrode (T) / lower electrode (B) / chamber side wall (W)) = 60 / 20 / 60°C, the source uses high Frequency RF s (13.56MHz) power Pb was set at 2000W. Can use BCl 3 and other halogen gases as etching gases.

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Abstract

To realize reduction in size and low cost of a matching circuit in the double-frequency superimposing and impressing system. In this plasma etching apparatus, an upper electrode 18 is connected (grounded) to the ground potential via a chamber 10, while a lower electrode 16 is electrically connected to a first radio frequency power source 40 (for example, 13.56 MHz) and a second radio frequency power source 42 (for example, 3.2 MHz) via a first matching unit 36 and a second matching unit 38. The second matching unit 38 in the lower frequency side is formed of a T-type circuit in which a coil 62 is provided in the final output stage and the coil 62 is also operated as a high-cut filter for shielding the radio frequency (13.56 MHz) from the first radio frequency power source 40.

Description

technical field [0001] The present invention relates to a plasma process, in particular to a plasma etching method and a plasma processing device in a parallel plate type RIE mode. Background technique [0002] Etching processing in the manufacturing process of semiconductor devices and FPD (Flat Panel Display) has been widely used in parallel plate type plasma etching apparatuses from the past to the present. Parallel plate type plasma etching equipment arranges the upper electrode and the lower electrode in parallel in the processing container or reaction chamber, mounts the processed substrate (semiconductor wafer, glass substrate, etc.) on the lower electrode, and applies high-frequency voltage to the lower part through the matching On at least one of the electrode and the upper electrode. The electric field formed between the two electrodes by the high-frequency voltage accelerates the electrons, and plasma is generated by the impact ionization of the electrons and the...

Claims

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Application Information

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IPC IPC(8): H01L21/3065C23F4/00H01L21/31H05H1/46
CPCH01J37/32165H01J37/32183H01L21/32136
Inventor 里吉务
Owner TOKYO ELECTRON LTD
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