Method for realizing RTD and HEMT single chip integration using dry etching technology

Abstract

A method of realizing integrating of RTD and HEMT using dry etching technique includes: Vegetating typical HEMT material structure and RTD material structure on the underlay; photoengraving the pattern of RTD emitting area to produce AuGeNi metal layer to form RTD metal emitting pole; photoengraving to form source area; photoengraving the source electrode and drain electrode of HEMT; anneal in high temperature; photoengraving the HEMT bar pattern to corrode part of the adulteration hat layer; a layer of passivation medium is deposited on surface of device; photoengraving the HEMT gate electrode pattern to generate TiPtAu metal as the gate electrode of HEMT element; photoengraving the down-lead hole; photoengraving the down-lead interlinkage area, vaporizing or sputtering thick TiAlTiAu metal electrode, and then it is peeled off.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to the technology of preparing resonant tunneling diodes and transistor monolithic integrated circuits on III-V substrates. Background technique [0002] Since the industrialized mass production of silicon large-scale integrated circuits in the 1960s, Moore's Law has been followed to improve circuit performance through the reduction of feature size, achieving higher integration, faster speed and lower power consumption. Because of this, at the end of the last century, Intel delivered Pentium processor chips and personal computers with unprecedented levels of integration and performance to users. At present, the characteristic size of MOSFET has reached 45nm, and then as the characteristic size approaches the nanometer scale, quantum effects gradually appear and dominate, and some problems such as metal interconnection, current tunneling and power consumption are becoming more...

AI Technical Summary

Problems solved by technology

[0007] At present, the monolithic integration of RTD and HEMT is mainly realized by wet etching method. However, due to the common lateral corrosion in wet process, the size of the device cannot be accurately controlled, and it is not suitable for the production of small-sized device circuits.

Moreover, due to the consistency of the wet method, uniform corrosion cannot be achieved on the entire sheet (especially above 4 inches), which is not conducive to the integration of large-scale devices, and does not meet the needs of industrialized mass production.

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