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Etching solution composition for silver-containing layer and a display substrate using the same

A technology for display substrates and compositions, applied in the direction of surface etching compositions, optics, instruments, etc., can solve the problems of poor wiring side profile, difficulty in fine etching, increased silver re-adsorption, etc., to maintain etching uniformity, excellent Etching uniformity, anti-resorption effect

Inactive Publication Date: 2017-12-01
DONGWOO FINE CHEM CO LTD
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] When a thin film containing silver (Ag) is vapor-deposited on a substrate, if a conventional etchant is used for patterning and etching, the following problems may arise: re-adsorption due to poor etching or slow etching speed. Process time becomes longer and fine etching is difficult
In particular, in the case of conventional compositions containing potassium acetate in the etchant composition, the re-adsorption of silver increases, making it difficult to achieve high-resolution display, resulting in problems in the process.
[0007] In addition, compared with this, due to excessive etching or uneven etching of silver (Ag), the wiring may be warped or peeled off, and the side profile of the wiring may be defective.

Method used

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  • Etching solution composition for silver-containing layer and a display substrate using the same

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0073] Performance test of etching solution composition

[0074] Indium oxide film / silver film / indium oxide film are sequentially coated on the substrate to form a three-layer film, and a photoresist with a predetermined pattern is formed on the substrate through a photolithography process to prepare a test piece. Thereafter, an etching process was performed on the indium oxide film / silver film / indium oxide film using the compositions of Examples 1 to 8 and Comparative Examples 1 to 12, respectively.

[0075] Put the etching solution compositions of the above-mentioned Examples 1-8 and Comparative Examples 1-12 into the experimental equipment of the jet etching method (model name: ETCHER (TFT), K.C.Tech Company), and set the temperature to 40°C while heating. After that, when the temperature reached 40±0.1° C., the above-mentioned etching process of the test piece was carried out. Regarding the total etching time, it was carried out in accordance with the process time carri...

experiment example 1

[0076] Experimental example 1. Measurement of side erosion distance of etching solution composition

[0077] Afterwards, the substrate is put in and sprayed, and the etched substrate is taken out, washed with deionized water, and then dried. The dried substrate was cut, and the cross section was confirmed with a scanning electron microscope (SEM, model name: SU-8010, manufactured by Hitachi Corporation).

[0078] As a standard for measuring the side etch distance, the width from the edge of the photoresist to the inside of the etched metal was measured, and the results are shown in Table 2 below.

[0079]

[0080] ◎: very good (side erosion ≤ 0.1μm)

[0081] ○: Excellent (0.1μm<undercut≤0.2μm)

[0082] △: Good (0.2μm

[0083] Ⅹ: Poor (side etching>0.3μm)

experiment example 2

[0084] Experimental example 2. Silver re-adsorption measurement

[0085] Afterwards, the substrate was put in and sprayed, and when the etching time reached 100 seconds, the substrate was taken out and washed with deionized water. After that, it is dried with a hot air drying device, and the photoresist is removed with a photoresist stripper (PR stripper). After washing and drying, use a scanning electron microscope (SEM, model name: SU-8010, manufactured by Hitachi Corporation) to examine the specific parts where friction may occur mainly at parts where dissimilar metals such as data wiring are exposed or due to bending phenomena after etching. The phenomenon that etched silver (Ag) is adsorbed on the part is analyzed by observing the whole surface. pass figure 1 and the following criteria were evaluated, and the results are shown in Table 2 below.

[0086]

[0087] ◎: Excellent (less than 50)

[0088] ○: Excellent (below 80)

[0089] △: Good (less than 100 pieces) ...

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Abstract

The invention relates to the etchant composition and display substrate using the same of the argentiferous thin film, more specifically, the phosphoric acid 45 about the total weight of composition, through 55 weight%, the nitric acid 2 through 9 weight%, the acetic acid 5 through 15 weight%, and the potassium nitrate 1 through 5 weight%, the etchant composition of the argentiferous thin film including the residual water, and the display substrate using the same.

Description

technical field [0001] The present invention relates to an etchant composition containing a silver thin film and a display substrate using the same. More specifically, it relates to a composition containing 45 to 55% by weight of phosphoric acid, 2 to 9% by weight of nitric acid, and 5 to 15% by weight of acetic acid relative to the total weight of the composition. % by weight, 1 to 5% by weight of potassium nitrate and the balance of water, an etchant composition containing silver thin film and a display substrate using the same. Background technique [0002] With the official entry into the information age, the field of displays that process and display a large amount of information has grown rapidly. In line with this trend, a variety of flat panel displays have been developed and are receiving special attention. [0003] Examples of such flat panel display devices include liquid crystal display devices (Liquid Crystal Display device: LCD), plasma display devices (Plasma ...

Claims

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Application Information

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IPC IPC(8): C23F1/30
CPCC23F1/30C09K13/04G02F1/1343H10K59/12H10K71/621
Inventor 沈庆辅安基熏李承洙张晌勋
Owner DONGWOO FINE CHEM CO LTD
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