Method for forming metal wire harness

A wiring and metal technology, which is applied in the field of etching liquid composition of copper-based metal film, can solve problems such as indium oxide film etching, and achieve the effect of excellent etching uniformity and flatness

Active Publication Date: 2013-04-24
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of the above-mentioned patent, there is a problem that in addition to the upper copper film, the indium oxide film as the lower film is also etched.

Method used

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  • Method for forming metal wire harness
  • Method for forming metal wire harness
  • Method for forming metal wire harness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to Embodiment 7， and comparative example 1 to comparative example 3

[0054] Example 1 to Example 7, and Comparative Example 1 to Comparative Example 3: Etching solution composition containing sulfonic acid preparation of

[0055] According to the compositions shown in Table 1 below, 180 kg of etching solution compositions of Examples 1 to 7 and Comparative Examples 1 to 3 were prepared.

[0056] 【Table 1】

[0057]

[0058] PTSA: p-toluenesulfonic acid

[0059] SFA: sulfanilic acid

Embodiment 8 to Embodiment 14， and comparative example 4 to comparative example 6

[0060] Embodiment 8 to embodiment 14, and comparative example 4 to comparative example 6: make the etchant of organic peracid Preparation of the composition

[0061] According to the compositions shown in Table 2 below, 180 kg of etching solution compositions of Examples 8 to 14 and Comparative Examples 4 to 6 were prepared.

[0062] 【Table 2】

[0063]

Embodiment 15 to Embodiment 21， and comparative example 7 to comparative example 9

[0064] Example 15 to Example 21, and Comparative Example 7 to Comparative Example 9: Etching Containing Phosphonic Acid Derivatives Preparation of liquid composition

[0065] According to the compositions shown in Table 3 below, 180 kg of etching solution compositions of Examples 15 to 21, and Comparative Examples 7 to 9 were prepared.

[0066] 【table 3】

[0067]

[0068]

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PUM

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Abstract

The invention provides a method for forming a wire harness for a copper-based metal film through an etching liquid compound, so that in a double layer coating of a metallic oxide layer and a copper layer, erosion of the metallic oxide at a lower part is minimized and only the copper layer at an upper part is eroded. In addition, the etching liquid compound for the copper-based metal film is provided.

Description

technical field [0001] The present invention relates to an etchant composition for a copper-based metal film and a wiring forming method for a copper-based metal film using the above-mentioned etchant composition. Background technique [0002] In a liquid crystal display device, the process of forming metal wiring on a substrate generally consists of a metal film formation process based on sputtering, etc., a photoresist formation process in selective regions based on photoresist coating, exposure, and development, and Based on the steps of the etching process, including cleaning processes before and after individual unit processes. The etching process refers to the process of using photoresist as a mask (mask) and leaving a metal film in a selective area, usually using dry etching using plasma or wet etching using an etchant composition . [0003] Various film qualities are proposed for these wirings depending on the driving method and the resolution to be realized. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/02C23F1/18
Inventor 李石李铉奎李恩远金镇成郑敬燮
Owner DONGWOO FINE CHEM CO LTD
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