Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-voltage bandgap-free reference voltage source

A technology of reference voltage source and reference voltage, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., to achieve the effects of small process influence, overcoming nonlinear relationship problems, and adjustable output voltage

Inactive Publication Date: 2013-11-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the above-mentioned problems existing in the existing reference voltage source, and propose a low-voltage non-bandgap reference voltage source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-voltage bandgap-free reference voltage source
  • Low-voltage bandgap-free reference voltage source
  • Low-voltage bandgap-free reference voltage source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0017] The circuit structure of this example is as figure 2 As shown, including: 14 NMOS transistors (N1~N14), 18 PMOS transistors (P1~P18), 7 resistors (R1~R7) and 5 capacitors (C1~C5). The specific connection relationship of the circuit is as follows:

[0018]The sources of the PMOS transistors P1~P18 are all connected to the power supply voltage VDD; the gate of the PMOS transistor P1, one end of the capacitor C1, one end of the capacitor C2, one end of the resistors R1~R5, one end of the resistor R7, and the sources of the NMOS transistors N1 and N2 Both poles and the sources of NMOS transistors N4~N14 are grounded at potential VSS; the drain of PMOS transistor P1 and the gate of PMOS transistor P2 are connected to the other end of capacitor C1; the drains of PMOS transistors P2 and P4, and the gate of NMOS transistor N2 The drain of the NMOS transistor N1 and the gate of the NMOS transistor N1 are connected to the other end of the capacitor C2; the gate of the PMOS tran...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the integrated circuit technique and discloses a low-voltage bandgap-free reference voltage source. According to the technical scheme, the low-voltage bandgap-free reference voltage source comprises a starting circuit composed of a CMOS transistor circuit, a first current generating circuit, a second current generating circuit, a third current generating circuit and an overlaying output circuit, wherein the starting circuit is used for providing a starting bias voltage for the whole circuit, the first current generating circuit is used for generating a current IPTAT in direct proportion to the temperature, the second current generating circuit is used for generating a current IPTOD in direct proportion to an overdriving voltage, the third current generating circuit is used for generating a current IPTTV in direct proportion to a threshold voltage, the current IPTTV is inversely proportional to the temperature, and the overlaying output circuit is used for overlaying of the current IPTAT and the current IPTTV and outputting a reference voltage VREF. The low-voltage bandgap-free reference voltage source has the advantages that the working voltage is low, the output voltage can be adjusted, influence of a technique on the low-voltage bandgap-free reference voltage source is little, and the area of a chip is small.

Description

technical field [0001] The invention relates to integrated circuit technology, in particular to a low-voltage non-bandgap reference voltage source for integrated circuits. Background technique [0002] The reference voltage source is a very important unit module circuit in the integrated circuit chip. It provides high-precision reference voltage for many functional modules in the chip, such as oscillators, phase-locked loops, digital-to-analog converters and other circuits. The stability of the reference voltage directly determines the performance of the entire circuit. In order to meet the requirement that the circuit can work normally under harsh external temperature environment, the reference voltage source must have very high temperature stability, that is, a very small temperature coefficient. [0003] The working principle of the traditional bandgap reference voltage source is to use the thermal voltage VT with a positive temperature coefficient to cancel the base-emi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 周泽坤刘德尚许天辉张其营张晓敏石跃明鑫王卓张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com