Broadband low noise amplifier

Abstract

The invention discloses a broadband low noise amplifier which comprises a primary common source and common gate amplifying circuit, a secondary common source amplifying circuit, an input and output matching circuit for providing a high gain for the circuit, a current extraction circuit for reducing the noise factor of the circuit, an MOS tube current source bias circuit, an HBT bias circuit and a bias network filter circuit for further reducing the noise factor of the circuit, wherein the common source and common gate circuit provides the high gain and simultaneously increases the reverse isolation degree of the circuit, and the common source amplifying circuit further improves the gain of the circuit; the MOS bias circuit and the HBT bias circuit provide stable low noise bias for a common gate tube and a common source tube; and the bias filter circuit filters radio-frequency signals on the bias to stabilize the bias, thereby reducing the noise factor to the minimum. The invention can be widely applied to modern wireless communication standards such as GSM850, GSM900, DCS1800, PCS1900, WCDMA and the like.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, and relates to a silicon germanium bipolar-complementary metal oxide semiconductor (SiGe BiCMOS) radio frequency integrated circuit in an integrated circuit, specifically a 0.8GHz-2.1GHz radio frequency integrated circuit Band SiGe BiCMOS process broadband low noise amplifier. Background technique [0002] The low noise amplifier is located at the front end of the radio frequency in the radio frequency microwave communication system and is directly connected to the receiving antenna. Its performance directly affects the receiving performance of the entire system. Especially the noise figure of the low noise amplifier directly affects the sensitivity and bit error rate of the receiver. [0003] The rapid development of wireless communication technology has led to the continuous innovation of new standards. Users hope that through the multi-mode terminal in their ...

AI Technical Summary

Problems solved by technology

Due to the frequency selection effect of the inductor L1 and the parasitic capacitance of the transistor M2, the inductor is used as the load, so the traditional low noise amplifier can only be used as a narrowband low noise amplifier, and it is impossible to obtain a flat gain and input-output matching in a wide frequency range.

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