Vertical MOSFET SRAM cell

Abstract

A method of forming an SRAM cell device includes the following steps. Form pass gate FET transistors and form a pair of vertical pull-down FET transistors with a first common body and a first common source in a silicon layer patterned into parallel islands formed on a planar insulator. Etch down through upper diffusions between cross-coupled inverter FET transistors to form pull-down isolation spaces bisecting the upper strata of pull-up and pull-down drain regions of the pair of vertical pull-down FET transistors, with the isolation spaces reaching down to the common body strata. Form a pair of vertical pull-up FET transistors with a second common body and a second common drain. Then, connect the FET transistors to form an SRAM cell.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] This invention relates to MOSFET SRAM cells and more particularly to a method of manufacturing a Vertical MOSFET SRAM cell and the structure provided thereby. [0003] 2. Description of Related Art [0004] Use of vertical channel MOSFETs enables precise control of channel length, for high performance applications. [0005] U.S. Pat. No. 6,477,080 of Noble for “Circuits and Methods for a Static Random Access Memory Using Vertical Transistors” describes a vertical SRAM device with floating bodies of the FET devices in the SRAM circuit. The patent also states as follows: [0006]“The n-channel and p-channel transistors of memory cell . . . have gates that are formed of n+ and p+ polysilicon, respectively. The polysilicon gates in an inverter are coupled together with a gate contact that is formed of a refractory metal so as to provide a dual work function feature for desired surface channel characteristics in each transistor ...

AI Technical Summary

Benefits of technology

[0021] In accordance with this invention an advantage is that there is no area penalty compared to a contacted body layout.

[0023] Another object of this invention is to interconnect body layers without the complications of forming a body line and since the process of this invention requires simply recessing the drain region until it falls below the body layer. Without the buried isolation layer and a buried recessed spacer of Forbes et al. supra the process is simple and straightforward.

[0024] The pass gate or transfer devices in accordance with this invention have replaced the conventional single sided gate, with a surrounded gate which provides a much higher transconductance due to three dimensional (3D) channel volume depletion, more drivability and efficiency. As the result, the SRAM cell will suffer less disturbance, or better cell stability.

[0026] The structure provided by the present invention completely avoids any concern about vertical alignment of the body contact precisely with the channel to avoid leakage between source / drain diffusions and the body contact which exist for the Forbes et al. embodiment. The structure provided by the present invention also completely avoids any concern about the presence of a body contact in close proximity to a gated channel and diffusions (which would be likely to introduce an extremely high carrier recombination velocity due to interfacial defects that would burden transistor operation with significant leakage currents) which exist for the Forbes et al. embodiment. The above concerns are overcome since interconnection between opposing vertical MOSFET devices is made by an undisturbed single crystal silicon bridge forming a common body for those MOSFET devices.

Problems solved by technology

We believe that there is a problem with a structure with individual floating body devices the components of the cross coupled inverters of an SRAM circuit.

The problem is that with individual floating body devices the devices suffer from Vt mismatch, which means that the values of matched pull-up transistor pairs and matched pull-down transistor pairs will float to divergent Vt values due to body charging.

In addition to potential loss of data due to errors caused by highly divergent Vt values, in less serious cases of Vt mismatch the result will be a compromise in the sensitivity of the cell.

When the Vt values of the matched transistor pairs diverge, there is a significant risk of loss of data.

The alternative of providing external body contacts is undesirable in that valuable surface area of the SRAM structure will be required to locate the contacts.

Often that non-obvious combination of materials and process steps may result in drawbacks and / or incompatibility with other structures.

The intrinsic polysilicon is not a good insulator material.

As referred to herein above, this produces a large Vt mismatch.

In addition, in the instance if all bodies were tied together, performance would approach a performance of bulk devices (except for reduced junction capacitance).” The problems with the Flaker et al. patent are that it relates to planar SRAM devices, not Vertical SRAM devices and it does not suggest a process for forming such devices.

In addition, the Flaker et al. patent does not provide any guidance as to the kind of process to employ in the manufacture of a vertical SRAM device or the structure of a vertical SRAM device.

There is a problem of providing a Vertical SRAM device without the problems of floating body variations in Vt mismatch which are unreliable since they can destroy data on the one hand or the consumption of surface are of the devices to provide contacts to the bodies of the FET devices to overcome the Vt mismatch problems.

There are problems with the scheme used for body contacting in Forbes et al.

Secondly, the presence of the body contact in such close proximity to the gated channel and diffusions may introduce an extremely high carrier recombination velocity due to interfacial defects that would burden transistor operation with significant leakage currents.

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