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858results about How to "Velocity increases" patented technology

Artificial valve prosthesis with improved flow dynamics

An expandable venous valve having a support structure that configured to enlarge the area adjacent to the valve structure such that the flow patterns of retrograde flow are modified in a way that facilitates the flushing of the pockets at the base of the valve area to prevent stagnation of bodily fluid, which in the venous system, can lead to thrombus formation. The enlarged pocket areas can be created by forming an artificial sinus adjacent the valve structure in an unsupported section of vessel wall between two support frame section or the support frame can comprise an expanded-diameter intermediate or proximal section that forms an artificial sinus adjacent the valve structure. In another group of embodiments, the attachment pathway between opposing leaflets and the support frame and / or vessel wall comprises a proximal portion that places the leaflets in extended contact with one another and a distal portion forms a large angle with respect to the adjacent walls such that a large pocket is created at the base of the leaflets. In one embodiment, the attachment pathway extends distally along a pair of substantially parallel longitudinal attachment struts to create an extended leaflet contact area, then angles circumferentially and distally from the former along distal attachment struts to define the bottom edge of the leaflets.
Owner:COOK MEDICAL TECH LLC

Artificial Valve Prosthesis with Improved Flow Dynamics

An expandable venous valve having a support structure that configured to enlarge the area adjacent to the valve structure such that the flow patterns of retrograde flow are modified in a way that facilitates the flushing of the pockets at the base of the valve area to prevent stagnation of bodily fluid, which in the venous system, can lead to thrombus formation. The enlarged pocket areas can be created by forming an artificial sinus adjacent the valve structure in an unsupported section of vessel wall between two support frame section or the support frame can comprise an expanded-diameter intermediate or proximal section that forms an artificial sinus adjacent the valve structure. In another group of embodiments, the attachment pathway between opposing leaflets and the support frame and/or vessel wall comprises a proximal portion that places the leaflets in extended contact with one another and a distal portion forms a large angle with respect to the adjacent walls such that a large pocket is created at the base of the leaflets. In one embodiment, the attachment pathway extends distally along a pair of substantially parallel longitudinal attachment struts to create an extended leaflet contact area, then angles circumferentially and distally from the former along distal attachment struts to define the bottom edge of the leaflets.
Owner:COOK MEDICAL TECH LLC

Automotive radar with radio-frequency interference avoidance

An automotive radar system is disclosed that comprises an interference classifier 203 for determining a type of interference in a signal received from a multiuser environment. A sweep pattern comprising frequency sweep signals for a transmitted radar waveform is then advantageously determined in dependence upon the level of interference experienced by frequency sweep signals for the determined type of interference. The automated radar system comprises: a receiver 102 operable to receive a noise signal comprising burst noise, frequency chirp signals generated by one or more other users, or a combination thereof; a signal generator 109, 110 operable to generate a plurality of different frequency sweep signals; a signal combiner 104 operable to combine each frequency sweep signal with a received noise signal to generate a combined signal for each frequency sweep signal; an interference classifier 203 operable to identify combined signals corresponding to received noise signals comprising frequency chirp signals and to determine the noise levels of said combined signals corresponding to received noise signals comprising frequency chirp signals; and a selector 206 operable to select a plurality of frequency sweep signals in dependence upon the noise level determinations by the interference classifier 203 on the combined signals corresponding to received noise signals comprising frequency chirp signals; and a control unit 206 operable to determine a sweep pattern comprising the selected plurality of frequency sweep signals to be transmitted as an output radar waveform.
Owner:MITSUBISHI ELECTRIC CORP

III-V charge coupled device suitable for visible, near and far infra-red detection

A photon detector is obtained by using the intersubband absorption mechanism in a modulation doped quantum well(s). The modulation doping creates a very high electric field in the well which enables absorption of input TE polarized light and also conducts the carriers emitted from the well into the modulation doped layer from where they may recombine with carriers from the gate contact. Carriers are resupplied to the well by the generation of electrons across the energy gap of the quantum well material. The absorption is enhanced by the use of a resonant cavity in which the quantum well(s) are placed. The absorption and emission from the well creates a deficiency of charge in the quantum well proportional to the intensity of the input photon signal. The quantity of charge in the quantum well of each detector is converted to an output voltage by transferring the charge to the gate of an output amplifier. The detectors are arranged in the form of a 2D array with an output amplifier associated with the entire array or a row of the array as in the known charge coupled devices, or a separate amplifier could be dedicated to each pixel as in the known architecture of the active pixel device. This detector has the unique advantage of near room temperature operation because the dark current is limited to the generation across the semiconductor bandgap and not the emission over the quantum well barrier. The detector also has the advantage that the readout circuitry is implemented monolithically by the HFETs formed in the GaAs substrate simultaneously, with the detecting elements.
Owner:UNIV OF CONNECTICUT
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