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85 results about "Spectroscopic ellipsometry" patented technology
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Small Spot Size Spectroscopic Ellipsometer
ActiveUS20130321810A1High measurement sensitivityIncrease the number ofPolarisation-affecting propertiesPhotomechanical apparatusAngle of incidenceMetrology
Methods and systems for small angle CD metrology with a small spot size are introduced to increase measurement sensitivity while maintaining adequate throughput necessary for modern semiconductor manufacture. A small angle CD metrology system includes a small angle spectroscopic ellipsometry (SE) subsystem combined with a small angle spectroscopic reflectometry system, both operated at small angles of incidence. The small angle SE subsystem is configured to operate in a complete Mueller Matrix mode to further improve measurement sensitivity. The small angle CD metrology system includes an objective having all reflective surfaces in the light path. In some embodiments, the all-reflective objective is a Schwartzschild objective having an axicon mirror element to further reduce measurement spot size. In some embodiments, the small angle CD metrology system includes a dynamic aperture subsystem to isolate specific ranges of angles of incidence and azimuth for improved measurement sensitivity.
Owner:KLA CORP
Terahertz time-domain spectroscopic ellipsometry system
ActiveUS20140264032A1Radiation pyrometryMaterial analysis by optical meansTime domainTerahertz radiation
A terahertz time-domain spectroscopic ellipsometry system includes a sample stage, a terahertz emitter configured to provide pulses of terahertz radiation with preselected polarization components to illuminate a sample on the sample stage along an incident direction, and a coherent terahertz detection system arranged to coherently detect pulses of terahertz radiation from the terahertz emitter along an emerging direction after at least one of reflecting from or passing through the sample. The sample stage is rotatable to vary a relative angle between the incident direction and the emerging direction, and the coherent terahertz detection system substantially maintains alignment for amplitude and polarization detection as the relative angle is varied.
Owner:THE JOHN HOPKINS UNIV SCHOOL OF MEDICINE
Method of manufacturing semicontor device having trench isolation
InactiveUS20030153136A1TransistorSemiconductor/solid-state device testing/measurementEngineeringElliptically polarized light
The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitride film (22), the thickness of an SOI layer 3 is measured (S2) and, by using the result of measurement, etching conditions (etching time and the like) for SOI layer 3 are determined (S3). To measure the thickness of SOI layer 3, it is sufficient to use spectroscopic ellipsometry which irradiates the surface of a substance with linearly polarized light and observes elliptically polarized light reflected by the surface of a substance. The etching condition determined is used and a trench TR2 is formed by using patterned nitride film 22 as an etching mask (S4).
Owner:RENESAS ELECTRONICS CORP
Self-Limiting Thin Film Synthesis Achieved by Pulsed Plasma-Enhanced Chemical Vapor Deposition
InactiveUS20080199632A1Improve throughputIncrease deposition rateChemical vapor deposition coatingPlasma techniqueSelf limitingFourier transform infrared spectroscopy
Ta2O5 and Al2O3 thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O2 and the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates (˜1 Å / pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90-350° C. As-deposited Ta2O5 films under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.
Owner:COLORADO SCHOOL OF MINES
High resolution monitoring of CD variations
ActiveUS7567351B2Adapt quicklyPhase-affecting property measurementsScattering properties measurementsOptical metrologySpectroscopic ellipsometry
Owner:THERMA WAVE INC
Method for characterizing line width roughness (LWR) of printed features
InactiveUS20080055597A1Scattering properties measurementsUsing optical meansGratingFrequency spectrum
A method for characterizing line width roughness of printed features is provided. A wafer having thereon a plurality of gratings formed within a test key region is prepared. The wafer is transferred to a spectroscopic ellipsometry tool having a light source, a detector and a computer. A polarized light beam emanated from the light source is directed onto the gratings. Spectrum data of reflected light is measured and recorded. The spectrum data is compared to a library linked to the computer in real time. The library contains a plurality of contact-hole model based spectra created by incorporating parameter values that describes the line width roughness. The spectrum data is matched with the contact-hole model based spectra, thereby determining the parameter values.
Owner:UNITED MICROELECTRONICS CORP
Optical parameter detection method of low-radiation coated glass
ActiveCN103323403APrecise structureNo damagePhase-affecting property measurementsColor/spectral properties measurementsOptical testSpectroscopic ellipsometry
The invention relates to an optical parameter detection method of low-radiation coated glass, wherein the low-radiation coated glass is SnO2:F / SiCxOy, 0<x<1, and 1<y<4. The invention belongs to a coated glass detection field. On basis of obtaining a spectroscopic ellipsometry of SnO2:F / SiCxOy energy saving coated glass, the method introduces a five-layer film structure and an optical dispersion equation, returns an actually-measured spectroscopic ellipsometry by iteration, and finally obtains a film structure of the SnO2:F / SiCxOy coated glass and optical parameters of each layer. By the method, on-line real time monitor of optical performances of the coated glass can be implemented. The method can obtain an accurate film structure and the optical parameters only by optical test means, has advantages of no damage on a sample, small time consuming for measuring, simple measuring method, and no special requirement on a sample surface to be measured, and is very suitable for performance detection of the SnO2:F / SiCxOy energy saving coated glass.
Owner:中玻(陕西)新技术有限公司
Spectroscopic scatterometer system
InactiveUS7173699B2Semiconductor/solid-state device testing/measurementPolarisation-affecting propertiesGratingRefractive index
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
Owner:KLA TENCOR TECH CORP
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
InactiveUS20100068834A1Improve accuracyAvoid damageSemiconductor/solid-state device testing/measurementPolarisation-affecting propertiesGallium nitrideLength wave
Owner:SUMITOMO ELECTRIC IND LTD
Systems And Methods For Extended Infrared Spectroscopic Ellipsometry
ActiveUS20170205342A1Accurate representationSmall featureRadiation pyrometrySpectrum investigationSignal-to-noise ratio (imaging)Semiconductor structure
Methods and systems for performing simultaneous spectroscopic measurements of semiconductor structures at ultraviolet, visible, and infrared wavelengths are presented herein. In another aspect, wavelength errors are reduced by orienting the direction of wavelength dispersion on the detector surface perpendicular to the projection of the plane of incidence onto the detector surface. In another aspect, a broad range of infrared wavelengths are detected by a detector that includes multiple photosensitive areas having different sensitivity characteristics. Collected light is linearly dispersed across the surface of the detector according to wavelength. Each different photosensitive area is arranged on the detector to sense a different range of incident wavelengths. In this manner, a broad range of infrared wavelengths are detected with high signal to noise ratio by a single detector. These features enable high throughput measurements of high aspect ratio structures with high throughput, precision, and accuracy.
Owner:KLA TENCOR TECH CORP
Method and device for rapidly measuring sidewall appearance of micro-nano deep groove structure
ActiveCN102082108ARealize onlineQuick measurementSemiconductor/solid-state device testing/measurementUsing optical meansMicro nanoMiddle infrared
The invention discloses a method and device for rapidly measuring sidewall appearance of a micro-nano deep groove structure, which can simultaneously and rapidly measure the parameters of the sidewall appearance of the micro-nano deep groove structure, such as line width, groove depth, sidewall angle, sidewall roughness and the like. The method comprises the steps of: projecting elliptical polarized lights, which is obtained by polarizing light beams with the wavelengths ranging from near infrared waveband to middle infrared waveband, onto the surface of a structure to be measured; collecting zero-level diffraction signals on the surface of the structure to be measured, and calculating to obtain a measured infrared spectroscopic ellipsometry of the micro-nano deep groove structure; calculating theoretical spectroscopic ellipsometries in the near infrared waveband and the middle infrared waveband respectively by using a wavelength allocation modeling method, matching the theoretical spectroscopic ellipsometries with the infrared spectroscopic ellipsometry measured in the experiment by using a stepwise spectral inversion method, and sequentially extracting the groove structure parameter and the roughness parameter. The device comprises an infrared light source, first, second, third and fourth off-axis parabolic mirrors, a Michelson's interferometer, a planar reflector, a polarizer, a sample bench, an analyzer, a detector and a computer; and the method is a noncontact, nondestructive low-cost method for rapidly measuring the sidewall appearance.
Owner:HUAZHONG UNIV OF SCI & TECH
Method for measuring optical constant of Gel-xCx thin film infrared spectroscopy area
ActiveCN104406773AExact optical constantThe optical constant hasTesting optical propertiesPhysical modelOptical thin film
The invention belongs to the technical field of optical thin film optical constant measurement, and particularly relates to a method for measuring optical constants of a Gel-xCx thin film infrared spectroscopy area. The method for measuring the optical constants of the Gel-xCx thin film infrared spectroscopy area comprises the following steps: measuring a thin film infrared transmitted spectrum so as to confirm the position of an absorption peak, establishing a thin film optical constant physical model according to the position of the absorption peak, and calculating by using an infrared transmitted spectrum and elliptical polarization spectrum combined composite target retrieval method to obtain optical constants such as the refractive index, the extinction coefficient and the physical thickness of a Gel-xCx thin film. Specifically, according to the scheme, the accurate position and the absorption magnitude of the absorption peak are confirmed according to the transmitted spectrum of a single-layer infrared thin film, on the basis, and regression calculation on an ellipsometry spectrum is performed, so that the optical constants of the thin film are obtained. The method has the advantages that the long optical constants of the thin film, particularly the optical constants of infrared thin films with absorption peaks, can be accurately obtained.
Owner:THE 3RD ACAD 8358TH RES INST OF CASC
Elliptical polarization instrument sample room device with variable temperature and temperature change method thereof
InactiveCN102183358AAuxillary controllers with auxillary heating devicesTesting optical propertiesTemperature controlGas cylinder
Owner:FUDAN UNIV
Time resolution elliptical polarization spectrum measuring system
InactiveCN102183466AGet Transient Optical ConstantsPolarisation-affecting propertiesBeam splitterLaser light
The invention belongs to the technical field of an optical electronic device and particularly relates to a time resolution elliptical polarization spectrum measuring system. The measuring system provided by the invention comprises a laser device, a beam splitter, reflectors, a delayer, a beam expander, a sample, a polarizer, a multi-channel analyzer, a CCD (charge coupled device) detector, a computer system, a stepper motor and the like, wherein the laser device adopts a tunable femtosecond ultrafast laser light source; the pulse light which is emitted from the light source is divided into pump light and detection light through the beam splitter; the pump light is vertically irradiated to the sample after passing through the delayer, the two reflectors and the beam expander; the detection light is irradiated to the sample after passing through the beam expander and the polarizer; the light passes through the multi-channel analyzer after being reflected by the sample and detected by the CCD surface array detector; and a computer computes the corresponding time resolution optical constant spectrum. The time resolution elliptical polarization spectrum measuring system provided by the invention has wide application prospects in multiple fields of physics, chemistry, biomedicine, environmental science and the like.
Owner:FUDAN UNIV
Application of spectroscopic ellipsometry to in-situ real time fabrication of multiple layer alternating high/low refractive index filters
InactiveUS6940595B1Improve manufacturing precisionGreat insightLight polarisation measurementComputational physicsSpectroscopic ellipsometry
Disclosed is application of oblique angle of incidence, reflection and / or transmission mode spectroscopic ellipsometry PSI and / or DELTA, (including combinations thereof and / or mathematical equivalents), vs. wavelength data to monitor and / or control fabrication of multiple layer high / low refractive index band-pass, band-reject and varied attenuation vs. wavelength filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence.
Owner:J A WOOLLAM CO
High resolution monitoring of CD variations
ActiveUS20070201017A1High resolutionIncrease spot sizePhase-affecting property measurementsScattering properties measurementsOptical metrologySpectroscopic ellipsometry
An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.
Owner:THERMA WAVE INC
Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film
InactiveCN102680410AEasy to makeAvoid damageColor/spectral properties measurementsRough surfaceMoving average
The invention discloses a method for non-destructively, quickly and accurately characterizing a bonding structure of a tetrahedral amorphous carbon (ta-C) film. The method comprises the following steps of: preparing the ta-C film on a quartz or silicon substrate, respectively measuring the transmittance T and ellipsometrical parameters phi and delta of the ta-C film by using an ultraviolet / visible / near infrared spectrophotometer and a spectroscopic ellipsometry instrument, solving the thickness df, the refractive index nf and the extinction coefficient kf of the ta-C film by using the parameters as fitting parameters and establishing a mathematical-physical model of a substrate layer, a ta-C film layer and a rough surface layer, respectively determining optical constants of materials with pure sp2C and pure sp3C bonding states, fitting with a Bruggeman algorithm under exponential moving average (EMA) approximation, and thus obtaining the chemical bond sp3 / sp2 content of the ta-C film. Compared with the conventional characterizing method, the invention has the advantages that the requirement for a sample is low, the characterizing process is quick, simple and feasible, the sample is not destructed, the characterizing precision and the characterizing accuracy are high, and the method has high popularization and application value.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
In-situ metrology system and method for monitoring metalization and other thin film formation
InactiveUS7414721B1Semiconductor/solid-state device testing/measurementSemiconductor/solid-state device manufacturingNon destructiveMetrology
An in-line, in-process or in-situ and non-destructive metrology system, apparatus and method provides composition, quality and / or thickness measurement of a thin film or multi-layer thin film formed on a substrate in a thin film processing system. Particularly, the subject invention provides a spectroscopic ellipsometer performing spectroscopic ellipsometry while the wafer is in a thin film processing system. In one form, the spectroscopic ellipsometer is associated with a wet bench system portion of the thin film processing system. The spectroscopic ellipsometer obtains characteristic data regarding the formed thin film to calculate penetration depth (Dp) for a thin film formed on the substrate. Particularly, the ellipsometer obtains an extinction coefficient (k) which is used to calculate penetration depth (Dp). Penetration depth (Dp), being a unique function of the extinction coefficient (k) provides the information for the composition, quality and / or thickness monitoring of the thin film.
Owner:BELL SEMICON LLC
Method of manufacturing semiconductor device having trench isolation
InactiveUS6841400B2Deterioration of characteristicInhibit deteriorationTransistorSemiconductor/solid-state device testing/measurementElliptically polarized lightSpectroscopic ellipsometry
Owner:RENESAS ELECTRONICS CORP
Method for measuring semiconductor constituent element content and method for manufacturing a semiconductor device
InactiveUS6858454B1Simple and accurate measurementImprove manufacturing yieldSemiconductor/solid-state device testing/measurementPolarisation-affecting propertiesSpectroscopic ellipsometrySemiconductor
A method for measuring semiconductor constituent element content utilizes the steps of: obtaining a film thickness of an SiGeC layer formed on a semiconductor substrate by evaluation using spectroscopic ellipsometry; measuring infrared absorption spectrum of the SiGeC layer; and obtaining a C content of the SiGeC layer based on the film thickness and the infrared absorption spectrum of the SiGeC layer. The method: obtaining an apparent Ge content of the SiGeC layer by evaluation using spectroscopic ellipsometry; and obtaining an actual Ge content of the SiGeC layer based on the apparent Ge content and the C content. The constituent element content of the SiGeC layer can be easily and accurately measured according to the above-mentioned method.
Owner:PANASONIC CORP
Spectroscopic scatterometer system
InactiveUS20100165340A1Semiconductor/solid-state device testing/measurementPolarisation spectroscopyGratingRefractive index
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
Owner:KLA CORP
Optical metrology tool having improved contrast
InactiveUS7050162B2Improve system performanceIncrease contrastSemiconductor/solid-state device testing/measurementSemiconductor/solid-state device manufacturingCollection systemPartial coherence
The subject invention relates to broadband optical metrology tools for performing measurements of patterned thin films on semiconductor integrated circuits. Particularly a family of optical designs for broadband optical systems wherein the ratio of illumination system to collection system numerical apertures is less than 1. System performance is enhanced through selection and control of the optical system partial coherence; this is accomplished through installation of beam-control apertures within the illumination and collection optical systems. The invention is broadly applicable to a large class of broadband optical wafer metrology techniques including spectrophotometry, spectroscopic reflectometry, spectroscopic ellipsometry and spectroscopic scatterometry.
Owner:THERMA WAVE INC
Application of intermediate wavelength band spectroscopic ellipsometry to in-situ real time fabrication of multiple layer alternating high/low refractive index filters
InactiveUS7295313B1Improve manufacturing precisionGreat insightMaterial analysis by optical meansLight polarisation measurementUltrasound attenuationAngle of incidence
Disclosed is application of oblique angle of incidence, reflection and / or transmission mode spectroscopic ellipsometry PSI and / or DELTA, (including combinations thereof and / or mathematical equivalents), vs. wavelength data over an intermediate wavelength band range around a pass or reject band, to monitor and / or control fabrication of multiple layer high / low refractive index band-pass, band-reject and varied attenuation vs. wavelength thin film interference filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence.
Owner:J A WOOLLAM CO
Spectroscopic ellipsometry device and method based on elasto-optical modulation
InactiveCN108519335AFast measurementHigh precisionPolarisation-affecting propertiesAutomatic controlPolarizer
The invention relates to the technical field of ellipsometry methods and instrument equipment, in particular to a spectroscopic ellipsometry device and method based on elasto-optical modulation. Achievement of the spectroscopic ellipsometry device and method is based on 45-degree dual-drive symmetrical structure elasto-optical polarization modulation and a FPGA elasto-optical drive control and data signal treatment technology. After a compound color light source outputs quasi-monochromatic light through a monochromator, through light speed shaping and collimation, the light exits from an analyzer and is detected and received by a photomultiplier after passing through a polarizer, a to-be-measured sample and an elasto-optical modulator. In an FPGA unit, cophase component and orthogonal component demodulation of a modulated optical signal frequency doubling item is achieved, and the introduction into a control computer is achieved; the spectroscopic ellipsometry device does not need mechanical adjustment, the measuring speed is high, the precision and the sensibility are higher, automatic control is convenient, and a new theory and a new method can be provided for relative fields ofthe spectroscopic ellipsometry technology.
Owner:ZHONGBEI UNIV
Spectroscopic ellipsometry real-time monitoring preparation method of nano-silicon thin film solar cells
InactiveCN104393116AReal-time monitoring of growth processMultiple structure informationFinal product manufactureVacuum evaporation coatingEvaporationSpectroscopic ellipsometry
The invention provides a spectroscopic ellipsometry real-time monitoring preparation method of nano-silicon thin film solar cells. The preparation method comprises seven major steps. Anisotropic etching is performed on a single crystal silicon wafer by use of a chemical method to form a pyramid-shaped texturized silicon wafer substrate; an intrinsic nano-silicon film having the crystalline content within the range of 50+ / -5% and the crystalline peaks within the range of 502-518cm-1 is prepared by use of a plasma enhanced chemical vapor deposition method, and a type N nano-silicon film can be prepared by doping PH3 and the like in the deposition process, and a type P nano-silicon film Can be prepared by doping b2h5; in the deposition process of the nano-silicon film, the preparation method of monitoring the growth process of the film in real time by use of spectroscopic ellipsometry is adopted, which is the core technology of the application; back electrodes, upper electrodes and transparent electrodes of nano-silicon thin film solar cells are prepared by use of a thermal evaporation method or a magnetron sputtering. The nano-silicon thin film solar cells having repeatability and high photoelectric conversion efficiency can be prepared by use of the spectroscopic ellipsometry real-time monitoring preparation method.
Owner:BEIHANG UNIV
Optical parameter detecting method for Si-based buffer layer coated glass
InactiveCN103884494ANo damageMeasurement time is shortUsing optical meansTesting optical propertiesOptical testingSpectroscopic ellipsometry
The invention relates to an optical parameter detecting method for Si-based buffer layer coated glass, and belongs to the field of coated glass detecting. A buffer layer coating film is made of SiCxOy, wherein x is larger than 0 but smaller than 1, and y is larger than 1 but smaller than 4. According to the method, on the basis of obtaining an elliptic polarization spectrum of the SiCxOy buffer layer coated glass, a three-layer film layer structure and an optical dispersion equation are introduced, the elliptic polarization spectrum is actually detected through the iteration in a regression mode, a film layer structure of the SiCxOy coated glass and optical parameters of all layers of the film layer structure are obtained lastly, and the optical performance of the coated glass is monitored on line according to the method. According to the method, the film layer structure and the optical parameters of a thin film can be accurately obtained according to the elliptic polarization optical testing means, a sample is not damaged, time for measurement is short, the measuring method is simple and convenient to conduct, the special requirement for the surface of a measured sample does not exist, and the method is very suitable for detecting and monitoring performance of the energy-saving SiCxOy coated glass.
Owner:ZHEJIANG UNIV
Method for determining ion concentration and energy of shallow junction implants
InactiveUS20050140976A1Polarisation-affecting propertiesScattering properties measurementsPeriodic excitationDopant
A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and / or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.
Owner:THERMA WAVE INC
System and Method for Azimuth Angle Calibration
ActiveUS20100010765A1Accurately determineMaterial analysis by optical meansTesting/calibration of speed/acceleration/shock measurement devicesMetrologyComputational physics
Owner:TOKYO ELECTRON LTD
Method and system for measuring deep trenches in silicon
ActiveUS7369235B1Reduced to practiceLess expensiveMaterial analysis by optical meansUsing optical meansMetrologyTest sample
A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.
Owner:KLA TENCOR TECH CORP
Focused beam spectroscopic ellipsometry method and system
InactiveUS20050105090A1Reduce off-axis aberrationsEliminate chromatic aberrationPolarisation-affecting propertiesLight polarisation measurementCatoptricsRefractive index
A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and / or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape to reduce off-axis aberrations in the focused beam. Some embodiments include both a spectrophotometer and an ellipsometer integrated together as a single instrument. In such instrument, the spectrophotometer and ellipsometer share a radiation source, and radiation from the source can be focused by either the spectrophotometer or the ellipsometer to the same focal point on a sample. Preferred embodiments of the ellipsometer employ a rotating, minimal-length Rochon prism as a polarizer, and include a spectrometer with an intensified photodiode array to measure reflected radiation from the sample, and a reference channel (in addition to a sample channel which detects radiation reflected from the sample).
Owner:PIWONKA CORLE TIMOTHY R +6
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