14 results about "Spectroscopic ellipsometry" patented technology

The present disclosure relates to methods and apparatus for characterising an interaction between a stimulus and a liquid thin film. An aspect of the disclosure provides a spectroscopic ellipsometry apparatus for characterising an interaction between a stimulus and a liquid thin film, the apparatus comprising: a stimulator, configured to provide a stimulus to a liquid thin film disposed on a volume of liquid to generate a wave in the liquid thin film, the liquid thin film and the volume of liquid having an interface therebetween, light beam optics for illuminating an area of the liquid thin film with a light beam, the light beam having a first polarisation, and a light collector coupled to a detector for receiving the light beam after reflection by the liquid thin film, the light beam having a second polarisation after reflection by the liquid thin film; a wave measurement module coupled to the light collector and configured to provide surface wave data to characterise a Lucassen wave in the liquid thin film based on the second polarisation.

The present invention provides a spectroscopic ellipsometry measurement system using a galvo mirror scanner module that can rapidly scan and measure large-area samples by using at least one galvo mirror scanner module to distribute incident light irradiated and polarized from a polarization state generating unit into multiple parts, and then adjusting the direction of the incident light distributed into multiple parts to reflect it to the sample.

The application discloses a silver alloy sheet-shaped electric contact piece corrosion inhibition treatment failure detection method and a regulation and control system, and comprises the following steps: S1: obtaining the thickness d of an organic protective film on the surface of the electric contact piece in real time through an ellipsometric spectrum org and the thickness d of an oxide film ox ; S2: inputting the thickness d of the organic protective film org or the thickness d of the oxide film ox into a preset film thickness-contact resistance correlation model to obtain a predicted contact resistance value R c ; S3: when the predicted contact resistance R c is less than or equal to 25 mΩ, the electric contact piece is determined to be qualified, and when the predicted contact resistance R c is greater than 25 mΩ, the electric contact piece is determined to be failed, a back-end processing flow is triggered, and a front-end cleaning process is returned. The application utilizes the dynamic change effect of the predicted contact resistance value R c to determine the failure of the electric contact piece in the front-end cleaning process, to timely investigate the causes of the failure of the cleaning tank, and to improve the timeliness and reliability of the electric contact piece failure detection.

A method and system for performing spectroscopic ellipsometry (SE) measurements of surface structures of optical elements fabricated on transparent substrates is presented herein. The SE measurement system is configured to detect light from the measured structures without contamination from light reflected from the backside of the transparent substrate. The surface structures of the optical elements include film structures and grating structures fabricated on thin transparent substrates. The SE-based measurement system is configured with a relatively large illumination numerical aperture (NA) and a relatively high demagnification ratio from the illumination source to the measurement spot on the optically transparent substrate. This configuration results in a relatively small measurement spot size, a small depth of focus, and minimizes the amount of light reflected from the backside of the optically transparent substrate. In addition, the relatively small collection aperture size further minimizes the amount of light reflected from the backside that reaches the detector.

The application belongs to the technical field of spectral ellipsometry devices and methods, and particularly relates to a spectral ellipsometry accurate measurement device and method based on a single photoelastic modulator, wherein a polarizer, a photoelastic modulator and a measured sample are sequentially arranged in the light path direction of the monochromator, and a polarizer and a detector are sequentially arranged in the reflection light path of the measured sample. By scanning the single photoelastic modulator and the wide-band monochromatic light of the monochromator, and by combining the phase-locked amplification of the multiple frequency signals of the modulated photoelectric signals, the signal noise ratio is improved, the fluctuation of the modulation phase amplitude of the photoelastic modulator is obtained in real time by combining the theoretical calculation of the amplitude of the multiple frequency signals, the problem of the unstable phase delay amplitude of the photoelastic modulator caused by long-time work and environmental influence is solved, and the driving voltage of the photoelastic modulator can be adjusted in real time according to the different output wavelengths of the monochromator, so as to ensure the optimal modulation efficiency.

The present invention relates to a method and an apparatus for analyzing multilayer thin film characteristics through algebraic analysis of ellipsometric signals and, more specifically, to a method and an apparatus for analyzing multilayer thin film characteristics through algebraic analysis of ellipsometric signals, whereby the refractive index and thickness of a multilayer thin film can be simultaneously analyzed through algebraic equation analysis of reflection or transmission signals of light obtained through ellipsometry measurement.

Presented herein are methods and systems for performing spectral ellipsometry (SE) measurements of semiconductor structures based on data sets resolved by wavelength, azimuth, and incidence angles. In some embodiments, a machine learning-based measurement model is trained to infer estimated values of one or more parameters of interest characterizing a measured structure based on SE measurement data resolved by wavelength, azimuth, and incident angle. In some other embodiments, regression is performed on a physics-based measurement model to estimate values of one or more parameters of interest characterizing the measured structure. A dispersing element in the concentrated beam path disperses the collected light across an active surface of the detector to resolve the collected light according to a wavelength and an angular dimension. In addition, a plurality of images are collected by the detector to resolve the collected light across another angular size.

This invention belongs to the technical field of ellipsometry measurement devices, specifically relating to a high-speed Fourier spectral ellipsometry measurement device based on an elastic-optical modulation interferometer. A first polarizer is positioned along the optical path of the broadband polychromatic infrared light source, and a sample is positioned along the optical path of the first polarizer. The sample is placed on a stage, and a first rotatable compensator is positioned along the reflected optical path of the sample. A second polarizer is positioned along the optical path of the first rotatable compensator, and a high-speed elastic-optical modulation interferometer is positioned along the optical path of the second polarizer. A third polarizer is positioned along the optical path of the high-speed elastic-optical modulation interferometer, and a high-speed broadband detector is positioned along the optical path of the third polarizer. This invention solves the problem of slow broadband spectral ellipsometry measurement speed by combining high-speed elastic-optical modulation Fourier spectral spectral ellipsometry with spectral ellipsometry technology, achieving millisecond-level spectral ellipsometry measurement in the visible infrared broadband band.

Methods and apparatus for processing a substrate are provided herein. For example, a method includes using an extended spectroscopic ellipsometer to direct a beam of electromagnetic radiation having a beam energy toward a portion of a substrate at an incident angle to produce an extended spectroscopic ellipsometry (ESE) data set from the portion of the substrate which includes a measured change of a phase and / or an amplitude of the beam of electromagnetic radiation reflecting away from the portion of the substrate relative to the beam of electromagnetic radiation directed toward the portion of the substrate. One or more properties of the portion of the substrate are then determined based at least in part on the ESE data set of the portion of the substrate.

An embodiment of the present disclosure provides an ellipsometry apparatus and a method for obtaining surface information of an object to be measured, wherein the ellipsometry apparatus includes a polarized beam providing device for providing a plurality of parallel polarized beams, a first off-axis parabolic mirror for reflecting the plurality of parallel polarized beams and focusing the plurality of reflected first beams at target points on the surface of the object to be measured, where each polarized beam forms an acute angle with a corresponding first beam, a second off-axis parabolic mirror for reflecting a plurality of second beams formed after the reflected first beam is reflected by the surface of the object to form a plurality of parallel third beams, where each second beam forms an acute angle with a corresponding third beam, and an analyzing device for analyzing the plurality of parallel third beams. The embodiments of the present disclosure can significantly reduce the angle of incidence at which a polarized beam is incident on an off-axis parabolic mirror, thereby effectively guaranteeing the polarization state of the polarized beam.

The invention discloses a spectrum ellipsometry detection system and method based on a digital micromirror device. The system comprises a light source, a polarization state analysis unit, a spatial light modulator, at least one detector and a control unit. And the control unit is configured to load a programmable mask pattern to the spatial light modulator, and can dynamically optimize and switch the pattern based on feedback, so that the analyzed light beam is dynamically routed to different optical paths, and time-sharing or synchronous data acquisition is realized. According to the method, sample information is determined based on a routed optical signal through repeated acquisition and pattern control. According to the invention, the programmability of the spatial light modulator is utilized, the limitation of traditional fixed beam splitting is broken through, the adaptive distribution of light intensity is realized, samples with different reflectivity are adapted, the saturation of the detector is prevented, the signal-to-noise ratio is improved, and the dynamic range and efficiency of measurement are obviously improved.

Methods and apparatus for processing a substrate are provided herein. For example, a method includes using an extended spectroscopic ellipsometer to direct a beam of electromagnetic radiation having a beam energy toward a portion of a substrate at an incident angle to produce an extended spectroscopic ellipsometry (ESE) data set from the portion of the substrate which includes a measured change of a phase and / or an amplitude of the beam of electromagnetic radiation reflecting away from the portion of the substrate relative to the beam of electromagnetic radiation directed toward the portion of the substrate. One or more properties of the portion of the substrate are then determined based at least in part on the ESE data set of the portion of the substrate.

An imaging spectroscopic ellipsometry apparatus and method configured to measure thin films with high spatial resolution. The apparatus includes a rotating compensator that enables to simultaneously collect both spectrometric ellipsometric data and ellipsometric imaging with the use of the same measurement beam of light. Collecting both data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

The present application provides a kind of spectral ellipsometry system, comprising: light source, for providing the incident light of polarization state;First reflection projection objective lens, between light source and the optical path between the sample to be measured, for converging the incident light to the surface of the sample to be measured, to form detection spot;Second reflection projection objective lens, symmetrically first reflection projection objective lens is arranged between the optical path between the sample to be measured and spectrometer, for obtaining the reflection light of spot from the surface of the sample to be measured, and collimating processing is carried out to the reflection light;Spectrometer, obtains the reflection light output by second reflection projection objective lens, and carries out the spectrometry about incident angle to the reflection light, to output multiple beam based on partial incident angle spectrometry beam;And at least one detector, obtains multiple beam spectrometry beam output by spectrometer, and determines the film information on the surface of the sample to be measured according to the polarization state parameters of multiple beam spectrometry beam.