Method for measuring optical constant of Gel-xCx thin film infrared spectroscopy area

A technology of infrared spectroscopy and optical constants, which is used in the measurement of optical constants in the infrared spectral region of Ge1-xCx thin films, and can solve the problems of inability to obtain the precise values ​​of the center position of the absorption peak and the absorption size.

Active Publication Date: 2015-03-11
THE 3RD ACAD 8358TH RES INST OF CASC
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Problems solved by technology

[0003] At present, spectroscopic ellipsometry is widely used in Ge 1-x C x In the calculation of thin film optical constants, but for Ge with its own specific absorption peak 1-x C x For thin films, spectroscopic ellipsometry cannot obtain the exact value of the center position and magnitude of the absorption peak

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  • Method for measuring optical constant of Gel-xCx thin film infrared spectroscopy area
  • Method for measuring optical constant of Gel-xCx thin film infrared spectroscopy area
  • Method for measuring optical constant of Gel-xCx thin film infrared spectroscopy area

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Embodiment

[0037] In this embodiment, Ge will be deposited by ion beam reactive sputtering 1-x C x A thin film is taken as an example for specific description. Utilize technical scheme of the present invention to Ge below 1-x C x The optical constants of the film are measured from 2 μm to 10 μm.

[0038] 1) A single layer of Ge was deposited on a double-sided polished Ge substrate by ion beam reflective sputtering deposition. 1-x C x Thin film, the physical thickness is controlled at about 350nm. The specific process parameters are: Ge is used as the target material with a purity of ≥99.95%, CH4 is used as a reaction gas with a purity of ≥99.999%, and the working gas of the ion source is Ar with a purity of ≥99.999%. Back vacuum degree 10-3Pa, Ar gas flow 30sccm;

[0039] 2) Using the Spectrum GX infrared Fourier transform spectrometer of Perkin Elmer to measure Ge 1-x C x The infrared transmittance spectrum of the film, the wavelength range is 2 μm to 10 μm, and the interval is...

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Abstract

The invention belongs to the technical field of optical thin film optical constant measurement, and particularly relates to a method for measuring optical constants of a Gel-xCx thin film infrared spectroscopy area. The method for measuring the optical constants of the Gel-xCx thin film infrared spectroscopy area comprises the following steps: measuring a thin film infrared transmitted spectrum so as to confirm the position of an absorption peak, establishing a thin film optical constant physical model according to the position of the absorption peak, and calculating by using an infrared transmitted spectrum and elliptical polarization spectrum combined composite target retrieval method to obtain optical constants such as the refractive index, the extinction coefficient and the physical thickness of a Gel-xCx thin film. Specifically, according to the scheme, the accurate position and the absorption magnitude of the absorption peak are confirmed according to the transmitted spectrum of a single-layer infrared thin film, on the basis, and regression calculation on an ellipsometry spectrum is performed, so that the optical constants of the thin film are obtained. The method has the advantages that the long optical constants of the thin film, particularly the optical constants of infrared thin films with absorption peaks, can be accurately obtained.

Description

technical field [0001] The invention belongs to the technical field of measuring optical constants of optical thin films, and in particular relates to a Ge 1-x C x A method for measuring optical constants in the infrared spectral region of thin films. Background technique [0002] Ge 1-x C x The film has the advantages of variable refractive index, high hardness and good combination with the infrared window substrate, and is an ideal infrared anti-reflection hard protective film. Preparation of high performance variable refractive index Ge 1-x C x Thin film is very necessary for the design and development of hard protective film applied to high-speed flight infrared window to improve the optical and mechanical properties of infrared window. Preparation of Ge 1-x C x The main methods of thin films are magnetron sputtering, chemical vapor deposition and ion beam reactive sputtering deposition, etc. Ge 1-x C x Thin films have different optical constants, mainly includ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01M11/02
Inventor 刘丹丹姜承慧孙鹏刘华松赵志宏季一勤
Owner THE 3RD ACAD 8358TH RES INST OF CASC
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