The invention discloses a narrow-linewidth
tunable laser device and a preparation method thereof. A
laser chip sequentially comprises a substrate layer, a lower
waveguide layer and an upper waveguidelayer from bottom to top, wherein the lower
waveguide layer and the upper
waveguide layer are positioned on different planes and perform
optical energy exchange through vertical
coupling, the lower waveguide layer is provided with an active
gain waveguide and a lower-layer passive waveguide which are connected in a
butt joint mode, the lower-layer passive waveguide is provided with a plurality ofbent waveguides to prolong the cavity length, the upper waveguide layer is provided with an upper-layer passive waveguide and a micro-ring reflector, the upper-layer passive waveguide and the lower-layer passive waveguide are vertically coupled through a coupler, the micro-ring reflector is coupled with the upper-layer passive waveguide, and the upper-layer passive waveguide is provided with a plurality of bent waveguides to prolong the cavity length. The narrow-linewidth
tunable laser device is small in
laser chip size, tunable, narrow in linewidth, low in cost and high in stability.