Narrow-linewidth tunable laser device and preparation method thereof

A laser and narrow linewidth technology, applied in the field of lasers, can solve the problems of chip yield drop, affect chip end surface coating and mounting process, and reliability drop, so as to improve stability, reduce beam divergence angle, and reduce size Effect

Active Publication Date: 2020-10-02
武汉敏芯半导体股份有限公司
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  • Abstract
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Problems solved by technology

The larger the size of the laser chip, the more serious the warpage. The warpage caused by the size will seriously affect the coating and mounting process of the chip end face, resulting in a decrease in chip yield and reliability.

Method used

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  • Narrow-linewidth tunable laser device and preparation method thereof
  • Narrow-linewidth tunable laser device and preparation method thereof
  • Narrow-linewidth tunable laser device and preparation method thereof

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Embodiment Construction

[0033] In the following, the narrow linewidth tunable laser chip and its preparation method and laser of the present invention will be further explained in conjunction with the accompanying drawings:

[0034] The present invention provides a small size and narrow linewidth laser chip based on vertical coupling and micro-ring reflection technology. The active gain waveguide of the laser chip is used to provide signal gain; the lower passive waveguide serves as the expansion cavity of the active gain waveguide. Compress the line width of the output signal; the upper passive waveguide exchanges optical signals with the lower passive waveguide through the vertical coupling technology, extending the cavity length and further compressing the signal line width; the micro-ring reflector is coupled with the upper passive waveguide, on the one hand Play the role of a mirror, on the other hand, it also compresses the line width of the laser; the lower passive waveguide and the upper passive ...

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Abstract

The invention discloses a narrow-linewidth tunable laser device and a preparation method thereof. A laser chip sequentially comprises a substrate layer, a lower waveguide layer and an upper waveguidelayer from bottom to top, wherein the lower waveguide layer and the upper waveguide layer are positioned on different planes and perform optical energy exchange through vertical coupling, the lower waveguide layer is provided with an active gain waveguide and a lower-layer passive waveguide which are connected in a butt joint mode, the lower-layer passive waveguide is provided with a plurality ofbent waveguides to prolong the cavity length, the upper waveguide layer is provided with an upper-layer passive waveguide and a micro-ring reflector, the upper-layer passive waveguide and the lower-layer passive waveguide are vertically coupled through a coupler, the micro-ring reflector is coupled with the upper-layer passive waveguide, and the upper-layer passive waveguide is provided with a plurality of bent waveguides to prolong the cavity length. The narrow-linewidth tunable laser device is small in laser chip size, tunable, narrow in linewidth, low in cost and high in stability.

Description

Technical field [0001] The invention relates to the technical field of lasers, in particular to a narrow linewidth tunable laser and a preparation method thereof. Background technique [0002] Because coherent technology is suitable for long-distance transmission, communication fields such as backbone network and data center interconnection mainly use 400G and coherent optical modules with a transmission rate greater than 400G. The coherent technology has strict requirements on the phase noise (ie line width) of the laser transmitter. As the transmission bandwidth increases, the requirements for the laser linewidth are also increasing. For example, the 400G coherent technology requires the laser linewidth to be less than 100kHz. In addition, in order to use wavelength division multiplexing technology to further expand the bandwidth, coherent technology is more inclined to use wavelength tunable light sources. The current narrow linewidth light source technology mainly includes ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/12H01S5/20H01S5/068
CPCH01S5/068H01S5/101H01S5/12H01S5/20
Inventor 魏思航阳红涛王任凡
Owner 武汉敏芯半导体股份有限公司
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