Method and device for rapidly measuring sidewall appearance of micro-nano deep groove structure

Abstract

The invention discloses a method and device for rapidly measuring sidewall appearance of a micro-nano deep groove structure, which can simultaneously and rapidly measure the parameters of the sidewall appearance of the micro-nano deep groove structure, such as line width, groove depth, sidewall angle, sidewall roughness and the like. The method comprises the steps of: projecting elliptical polarized lights, which is obtained by polarizing light beams with the wavelengths ranging from near infrared waveband to middle infrared waveband, onto the surface of a structure to be measured; collecting zero-level diffraction signals on the surface of the structure to be measured, and calculating to obtain a measured infrared spectroscopic ellipsometry of the micro-nano deep groove structure; calculating theoretical spectroscopic ellipsometries in the near infrared waveband and the middle infrared waveband respectively by using a wavelength allocation modeling method, matching the theoretical spectroscopic ellipsometries with the infrared spectroscopic ellipsometry measured in the experiment by using a stepwise spectral inversion method, and sequentially extracting the groove structure parameter and the roughness parameter. The device comprises an infrared light source, first, second, third and fourth off-axis parabolic mirrors, a Michelson's interferometer, a planar reflector, a polarizer, a sample bench, an analyzer, a detector and a computer; and the method is a noncontact, nondestructive low-cost method for rapidly measuring the sidewall appearance.

Description

technical field [0001] The invention belongs to integrated circuit (IC) and microelectromechanical system (MEMS) device measurement technology, in particular to a method and device for rapid measurement of micro-nano deep trench structure etching process, the method is especially suitable for 3D interconnection vias (TSV) and Topography measurement of trench sidewall during deep trench structure processing in dynamic random access memory (DRAM). Background technique [0002] In the design and manufacturing process of microelectronics and power semiconductor devices, dense arrays of three-dimensional structures are widely used at present. For example, deep trench structures with high aspect ratios are used in the preparation of 3D interconnection vias (TSVs) and in the design of advanced dynamic random access memory (DRAM) capacitors. With the continuous development of the "scaling down" trend of semiconductor technology, the feature size of various deep trench structures in...

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Problems solved by technology

Due to the difference between the measurement conditions of the reflection spectrum of the reference reflective surface and the m

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