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Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film

A tetrahedral amorphous carbon and thin film technology, applied in the direction of color/spectral characteristic measurement, etc., can solve the problems of sample damage, sample preparation difficulty, and low characterization accuracy, and achieve no damage to the sample, simple sample preparation, and fast characterization process Effect

Inactive Publication Date: 2012-09-19
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical purpose of the present invention is to aim at sp in above-mentioned amorphous carbon film 2 C and sp 3 The measurement method of C content provides a method to characterize the bonding state structure of ta-C film, and this method can be used to characterize sp in ta-C film non-destructively, quickly, accurately and quantitatively 2 C and sp 3 C content, which solves the key problems of difficult sample preparation, low characterization accuracy, and damage to samples in the traditional amorphous carbon film bond structure test method that have high requirements for samples.

Method used

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  • Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film
  • Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film
  • Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film

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Embodiment 1

[0033] In this embodiment 1, sp in the ta-C thin film 2 C bonded state and sp 3 The characterization method of C bond state content is as follows:

[0034] (1) prepare ta-C thin film on quartz or silicon substrate (this preparation process is exactly the same as the preparation process of step (1) in comparative example 1), utilize ultraviolet / visible / near-infrared spectrophotometer to measure after preparation The transmittance T of the ta-C thin film on the substrate at normal incidence, the measurement wavelength is selected as 250-1700nm, and the scanning step is selected as 1nm;

[0035] (2) Start the spectroscopic ellipsometer and initialize it. The spectroscopic ellipsometer includes a sample stage, a vacuum pump, a polarizer, an analyzer and Wvase32 software. The Si substrate of the film is loaded on the sample stage;

[0036] (3) Set the measurement parameters, measure the optical constants of the ta-C film, and select the incident angles of light as 55°, 60° and 6...

Embodiment 2

[0042] This embodiment is basically the same as Embodiment 1, the only difference is that in the step (5), the wave band is selected as 380-1700nm, under the EMA approximation, the ta-C thin film is obtained by using the Bruggeman algorithm for fitting chemical bond sp 2 with sp 3 content, where sp 3 content such as figure 2 shown.

Embodiment 3

[0044] The present embodiment is basically the same as embodiment 1, and the only difference is that in the described step (5), the optical constant of graphite is used to represent the pure sp 2 C bond state (ie f sp2 =1) the optical constants of the material, the fitting waveband is selected as 250 ~ 1700nm, under the EMA approximation, by using the Bruggeman algorithm to fit, the chemical bond sp in the ta-C film is obtained 2 with sp 3 content, where sp 3 content such as figure 2 shown.

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Abstract

The invention discloses a method for non-destructively, quickly and accurately characterizing a bonding structure of a tetrahedral amorphous carbon (ta-C) film. The method comprises the following steps of: preparing the ta-C film on a quartz or silicon substrate, respectively measuring the transmittance T and ellipsometrical parameters phi and delta of the ta-C film by using an ultraviolet / visible / near infrared spectrophotometer and a spectroscopic ellipsometry instrument, solving the thickness df, the refractive index nf and the extinction coefficient kf of the ta-C film by using the parameters as fitting parameters and establishing a mathematical-physical model of a substrate layer, a ta-C film layer and a rough surface layer, respectively determining optical constants of materials with pure sp2C and pure sp3C bonding states, fitting with a Bruggeman algorithm under exponential moving average (EMA) approximation, and thus obtaining the chemical bond sp3 / sp2 content of the ta-C film. Compared with the conventional characterizing method, the invention has the advantages that the requirement for a sample is low, the characterizing process is quick, simple and feasible, the sample is not destructed, the characterizing precision and the characterizing accuracy are high, and the method has high popularization and application value.

Description

technical field [0001] The invention belongs to the technical field of amorphous carbon thin films, and in particular relates to a non-destructive, fast and accurate method for characterizing the bonding structure of tetrahedral amorphous carbon thin films. Background technique [0002] Due to its excellent physical and chemical properties such as high hardness, low friction coefficient, good corrosion resistance and biocompatibility, diamond-like amorphous carbon film has broad application prospects in manufacturing, micro-electromechanical, biology, aerospace and other fields. In the diamond-like amorphous carbon film material, the tetrahedral amorphous carbon film (tetrahedral amorphous carbon, ta-C) does not contain hydrogen, and the film has a high sp 3 C bond state, so the film has extremely high hardness and excellent optical properties, and has attracted much attention in the application design and manufacture of optical film materials. However, in practical applica...

Claims

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Application Information

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IPC IPC(8): G01N21/25
Inventor 汪爱英李晓伟孙丽丽柯培玲
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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