2D Ti3C2-MXene thin film material, preparation method thereof and application of material in resistive random access memory (RRAM)

Abstract

The invention relates to a 2D Ti3C2-MXene thin film material, a preparation method thereof and application of the material in an RRAM, and belongs to the technical fields of film preparation and microelectronic functional devices. An MXene film is prepared in the surface of a conductive substrate in a low-temperature one-step solution method, film formation is easy, and the film can be prepared ina large area more easily. The novel 2D material MXene is applied to the memory field instead of a traditional resistive switching material for the first time, the RRAM comprises a hard substrate, a bottom electrode, a resistive switching layer and a top electrode successively from bottom to top, the resistive switching layer is made of the 2D Ti3C2-MXene thin film material and in the thickness of100-450nm, a prepared device, as a nonvolatile memory, can keep the original resistive state when being powered off, and the device is kept stable after multiple continuous cycles, and is resistant to circulation.

Description

technical field [0001] The invention belongs to the technical field of film preparation and microelectronic functional devices, in particular to a two-dimensional Ti 3 C 2 -MXene thin film material and its preparation method and application in resistive memory. Background technique [0002] With the advent of the era of big data, people have higher and higher requirements for data storage. Memories based on the principle of charge storage, such as flash memory, are about to face the physical limit and technical limit of size reduction, and it is difficult to meet people's needs. Therefore, the development of new non-volatile memories with excellent performance has become a research hotspot in the semiconductor industry. [0003] Resistive variable memory uses thin film materials to exhibit different resistance states under the action of an external electric field to realize data storage. Resistive memory realizes storage through the reversible change of material resistanc...

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Problems solved by technology

Binary oxides have the advantages of simple structure, easy control of material components, and compatibility between the preparation process and the semiconductor process, but generally require a large initial voltage to form a conductive channel in the resistive layer, which increases power consumption and the complexity of peripheral circuits. degree

The preparation process of ternary and multi-component oxide materials is relatively complicated, and the composition ratio is difficult to control and difficult to be compatible with the current CMOS process. Therefore, the research on resistive variable memory based on multi-component metal oxides is mainly carried out in laboratories. The application of such materials in the industrial field The future is not clear

The disadvantage of magnetron sputtering is that it is difficult to prepare a multi-component compound film with a controllable stoichiometric ratio; the disadvantage of the sol-gel method is that the adhesion between the film and the substrate is poor, and the density of the film is not high.

The disadvantage of plasma oxidation technology is that the requirements for the experimental environment are extremely high, and the cost of experimental preparation is high.

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