Multilayer thick gas electron multiplier with suppressed charging effect and preparation method thereof

A gas electron multiplication and effect technology, applied in electron multiplier tubes, electrical components, measurement with semiconductor detectors, etc., can solve problems such as poor gain stability

Active Publication Date: 2020-10-27
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Because these accumulated charges are difficult to discharge, as the detector is exposed to irradiation time, the accumulated charges will continue to increase, and it will take a long time to reach equilibrium and stabilize the electric field, which will cause the effective gain of the detector to be long Constantly changing over time, gain stability over time is poor

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  • Multilayer thick gas electron multiplier with suppressed charging effect and preparation method thereof
  • Multilayer thick gas electron multiplier with suppressed charging effect and preparation method thereof
  • Multilayer thick gas electron multiplier with suppressed charging effect and preparation method thereof

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0029] The invention discloses a multi-layer thick gas electron multiplier that suppresses the charging effect, comprising: a substrate unit and a diamond-like carbon-based film, wherein,

[0030] The substrate unit is provided with a plurality of arrayed through holes;

[0031] An isolation ring is provided along the circumference of the through hole, and the isolation ring is located on the upper and lower surfaces of the substrate unit;

[0032] The diamond-like carbon-based film is formed on the surface of the substrate unit not covered by the isolation ring;

[0033] The base unit includes a copper layer and a PCB layer; the copper layer includes a top copper layer, a middle first copper layer, a middle second coppe...

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Abstract

A multilayer thick gas electron multiplier for suppressing a charging effect and a preparation method thereof are provided. The multilayer thick gas electron multiplier comprises a substrate unit anda diamond-like carbon-based film, wherein a plurality of arrayed through holes are disposed on the substrate unit; isolating rings are disposed in the circumferential direction of the through holes and are located on the upper and lower surfaces of the substrate unit; the diamond-like carbon-based film is formed in a surface of the substrate unit not covered by the isolating rings. The multilayerthick gas electron multiplier is improved in working stability, greatly increased in gain, and expanded in application range.

Description

technical field [0001] The invention relates to the field of microstructure gas detectors, in particular to a multilayer thick gas electron multiplier for suppressing charging effects and a preparation method thereof. Background technique [0002] Thick Gas Electron Multiplier (Thick Gas Electron Multiplier, referred to as THGEM) is a microstructured gas detector (MPGD) invented by R. Chechik et al. in 2004. The gain of a detector assembled from a single THGEM membrane can reach 10 4 Above, THGEM also has a position resolution of hundreds of microns and a time resolution of 10 nanoseconds. THGEM has broad application prospects in high-energy physics experiments, and has been considered for upgrading the Cherenkov ring imaging detectors of COMPASS experiment and ALICE experiment. In addition, THGEM has also been considered for use in pass-through radiation detectors for electron identification in electron-ion collider experiments. [0003] Since the detector assembled from...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J43/28H01J9/20G01T1/24G01T3/08
CPCG01T1/24G01T3/08H01J9/205H01J43/28
Inventor 周意宋国锋尚伦霖张广安鲁志斌吕游刘建北张志永邵明
Owner UNIV OF SCI & TECH OF CHINA
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