141results about "Electron multiplier tubes" patented technology

The present invention relates to an MCP unit or the like having a structure intended to achieve a desired time response characteristic, without depending on a limitation imposed by a channel diameter of MCP. The MCP unit comprises the MCP for releasing secondary electrons internally multiplied in response to incidence of charged particles, an anode arranged in a position where the secondary electrons reach, and an acceleration electrode arranged between the MCP and the anode. In particular, the acceleration electrode includes a plurality of openings which permit passing of the secondary electrons migrating from the MCP toward the anode. Further, the acceleration electrode is arranged such that the shortest distance B between the acceleration electrode and the anode is longer than the shortest distance A between the MCP and the acceleration electrode. Thus, an FWHM of a detected peak appearing in response to the incidence of the charged particles is remarkably shortened.

A near infrared screening film which consists of a biaxially oriented film made from a polyester containing a near infrared light absorber having a weight reduction start temperature of at least 280° C. and which has a haze value of 5% or less and a total transmittance for visible lights having a wavelength of 400 to 650 nm of 40% or more and which is exemplified by having optical properties at visible and near infrared ranges which satisfy the following expressions (1) to (4):1<T(850)<20  (1)1<T(950)<20  (2)−10<T(620)−T(540)<10  (3)−10<T(450)−T(540)<10  (4)wherein T(450), T(540), T(620), T(850) and T(950) are light transmittances at wavelengths of 450 nm, 540 nm, 620 nm, 850 nm and 950 nm, respectively.This film is inexpensive, has high handling ease, a high visible light transmittance and the function of preventing the malfunction of peripheral equipment caused by near infrared lights from the screen of a plasma display, for example, and can be suitably used in the front panel of the plasma display.

A detection system and a method for detecting ions which have been separated in a time-of-flight (TOF) mass analyzer, comprising an amplifying arrangement for converting ions into packets of secondary particles and amplifying the packets of secondary particles, wherein the amplifying arrangement is arranged so that each packet of secondary particles produces at least a first output and a second output separated in time and so that during the delay between producing the first and second output the first output produced by a packet of secondary particles is used for modulating the second output produced by the same packet. An increased dynamic range of detection and protection of the detection system against intense ion pulses is thereby provided.

A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO). The detector further includes an electron collector positioned to collect electrons emitted from the electron emitter and to produce a signal indicative of the amount of electrons collected, and a signal processor operatively connected to the electron collector for processing the signal to determine a characteristic of the radiation. The detector can be used to detect radiations of changed particles or light such as X-ray.

Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

An ion detector includes collision surfaces for converting both positively and negatively charged ions into emitted secondary electrons. Secondary electrons may be detected using an electron detector, than may, for example include an electron multiplier. Conveniently, secondary electrons (or electrons emitted by the multiplier) may be detected using an electron pulse counter.

The present invention provides systems, devices, device components and structures for modulating the intensity and / or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and / or detection of incident radiation, for example secondary electron emission and / or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission. Nano-structured semiconductor membranes of this aspect of the present invention are also useful as directed charge amplifiers wherein secondary emission from a nanopillar array provides gain functionality for increasing the intensity of radiation comprising incident electrons.