Thick gas electron multiplier having multilayer-structure single film

A technology of gas electron multiplication and multilayer structure, which is applied in the field of particle physics experiments and radiation detection, can solve the problems of reducing the thickness of multilayer structures, multilayer deformation and different parallelism, and solves the problems of alignment and dislocation between holes, The effect of reducing thickness

Inactive Publication Date: 2018-08-17
INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] According to the technical solution provided by the embodiment of the present application, the copper layer and the insulating layer are closely bonded to each other through the membrane plate formed by alternately stacking copper layers and insulating layers. The thickness of the multi-layer structure, the overall production of the membrane plate runs through the straight holes, ensuring the alignment of the holes, the deformation and parallelism between the layers are the same, and can solve the alignment and misalignment between the holes of the multi-layer structure, the deformation and parallelism between the layers different degrees of problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thick gas electron multiplier having multilayer-structure single film
  • Thick gas electron multiplier having multilayer-structure single film
  • Thick gas electron multiplier having multilayer-structure single film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The application will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the related invention, but not to limit the invention. In addition, it should be noted that, for ease of description, only the parts related to the invention are shown in the drawings.

[0017] It should be noted that the embodiments in the application and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present application will be described in detail with reference to the drawings and in conjunction with embodiments.

[0018] One of the embodiments of the present invention is, please refer to figure 1 , The thick gas electron multiplier with a single-film multilayer structure of the present invention includes a diaphragm 10 composed of alternately stacked copper layers 12 and insulating layers 11. The copper layer 12 is clo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The application discloses a thick gas electron multiplier having a multilayer-structure single film. The thick gas electron multiplier comprises a membrane plate formed by alternating lamination of copper layers and insulating layers; the copper layers and the insulating layers are in tight contact; and the copper layers are arranged at the bottom and top of the membrane plate. A plurality of through straight holes are formed in the membrane plate and penetrate the top layer and the bottom layer; and insulating rings are arranged at the inner walls of the through straight holes and are used for isolating the copper layers from the inner cavities of the through straight holes. Because the membrane plate formed by alternating lamination of copper layers and insulating layers is arranged andthe copper layers and the insulating layers are in tight contact, the through zone formed between the conventional multilayer superposed structures is removed and thus the thickness of the multi-layerstructure is reduced; and the through straight holes are formed in the membrane plate in an overall manner and thus hole alignment is ensured and deformation and parallelism between layers are the same, so that problems of misalignment of the holes of the multi-layer structure and large multi-layer deformation and parallelism difference are solved.

Description

Technical field [0001] The present disclosure generally relates to the field of particle physics experiments and radiation detection, in particular to the field of gas detectors, and in particular to a thick gas electron multiplier with a single film with a multilayer structure. Background technique [0002] In the fields of particle physics experiments (ie high-energy physics experiments) and radiation detection, gas detectors are important detection methods. The latest development direction of gas detectors is Micro-Pattern Gaseous Detector (MPGD), such as gas electron multiplier (Gaseous Electron Multiplier, GEM), thick gas electron multiplier (thick GEM), MicroMegas (MM), etc. Among them, the thick GEM is a relatively comprehensive microstructure gas detector developed in China. It has not only realized localization, but also has developed diversified. Thick GEM has the advantages of high gain, low cost, strong and durable. With the application of thick GEM in the TPC track...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/16
CPCG01T1/16
Inventor 谢宇广吕军光彭志远胡涛
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products