Method for preparing resistive gas electron multiplier film and resistive gas electron multiplier film

A technology of gas electron multiplication and thin film, applied in the direction of instruments, circuits, discharge tubes, etc., can solve the problems of loss of resistive electrodes, low gain, no signal, etc., and achieve the effect of stable performance, excellent performance and low cost

CN109148253AActive Publication Date: 2019-01-04UNIV OF SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2019-01-04

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Abstract

The present invention provides a method for preparing a resistive gas electron multiplier film which can form a resistive gas electron multiplier film including a first diamond-like carbon layer, a polyimide-based film and a second diamond-like carbon layer stacked in this order and having a through-hole array. The method includes forming a through hole using a combination of a protective layer, asandblasting treatment, and wet etching. The resistive gas electron multiplier film containing diamond-like carbon layer formed by the method of the invention has few defects and stable performance.The invention also provides a gas electron multiplier film and a gas electron multiplier.
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Description

technical field

[0001] The invention relates to the field of microstructure gas detectors, in particular to a method for preparing a resistive gas electron multiplier film, a resistive gas electron multiplier film and a resistive electron multiplier. Background technique

[0002] Gas Electron Multiplier (GEM, Gas Electron Multiplier) is a widely used detector in current Micro-Pattern Gaseous Detector (MPGD, Micro-Pattern Gaseous Detector). The body of the GEM detector is made of a GEM film. GEM films are usually provided with electrode layers on both sides of the polyimide film. Proposed electrode layers include copper layers, chrome layers, resistive polyimide-based thin film layers, and the like. For a GEM to function properly, an array of through holes needs to be formed in the GEM film. When electrons pass through the through hole under the action of an electric field, they collide with gas molecules and ionize to generate multiple secondary electrons, and the origina...

Examples

Embodiment

[0067] GEM films were prepared by the following steps:

[0068] Step 1. Use Teer 650 magnetron sputtering equipment to deposit DLC with a thickness of 100nm on both the upper and lower surfaces of the APICAL substrate with a thickness of 50μm and a size of 15cm×15cm. The surface resistivity of DLC is about 50MΩ / □. Then plate copper with a thickness of 4.3 μm on the surface of the DLC;

[0069] Step 2. Within the range of 10cm×10cm in the central area of ​​the substrate obtained in step 1, use wet etching to etch the copper layer on the upper and lower surfaces of the substrate with a diameter of 70 μm and a pitch of 140 μm, arranged in a hexagonal array holes, so that the DLC under the copper layer is exposed in the area of ​​the hole array.

[0070] Step 3, taking the substrate obtained in step 2 out of the copper etching solution, washing it with water, and then putting it in an oven at 70°C for 2 hours to dry;

[0071] Step 4. Sandblasting the upper and lower surfaces of ...